Record High-Proximity-Induced Anomalous Hall Effect in (BixSb1–x)2Te3 Thin Film Grown on CrGeTe3 Substrate

Yao, Xin Cheng; Gao, Bin; Han, Myung Geun; Jain, Deepti; Moon, Jisoo; Kim, Jae Wook; Zhu, Yimei; Cheong, S.-W.; Oh, Seongshik

doi:10.1021/acs.nanolett.9b01495

Cited by 45 publications

(44 citation statements)

References 36 publications

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“…Recently, the growth technology for 2D intrinsic ferromagnetic (FM) semiconductors has achieved important progress, and atomic layers of CrI 3 [28] and Cr 2 Ge 2 Te 6 [29] were realized by mechanical exfoliation. These 2D ferromagnets can potentially act as ideal basic units for designing 2D vdW heterostructures with FM orders driven by proximity effects [30][31][32]. With this guidance, the QAH effects in graphene-based heterostructures were predicted [8,9], but nontrivial band gaps of these heterostructures are very small due to the extremely weak spin-orbital coupling (SOC) of graphene.…”

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confidence: 99%

Intrinsic quantum anomalous Hall phase induced by proximity in the van der Waals heterostructure germanene/ Cr2Ge2Te6

et al. 2020

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A van der Waals heterostructure combined with intrinsic magnetism and topological orders have recently paved attractive avenues to realize quantum anomalous Hall effects. In this work, using first-principles calculations and effective model analysis, we propose that the robust quantum anomalous Hall states with sizable band gaps emerge in the van der Waals heterostructure of germanene/Cr2Ge2Te6. This heterostructure possesses high thermodynamic stability, thus facilitating its experimental fabrication. Furthermore, we uncover that the proximity effect enhances the coupling between the germanene and Cr2Ge2Te6 layers, inducing the nontrivial band gaps in a wide range from 29 meV to 72 meV. The chiral edge states inside the band gap, leading to Hall conductance quantized to −e 2 /h, are clearly visible. This findings provide an ideal candidate to detect the quantum anomalous Hall states and realize further applications to nontrivial quantum transport at a high temperature.arXiv:2002.12624v1 [cond-mat.mtrl-sci]

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confidence: 99%

Intrinsic quantum anomalous Hall phase induced by proximity in the van der Waals heterostructure germanene/ Cr2Ge2Te6

et al. 2020

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“…Among such compound superconductors, Fe(Te,Se) (or FTS) system stands out in that it exhibits the highest superconducting TC (well above 10 K) among chalcogenides. However, unlike TI films, which can grow on almost any chemically-stable substrate regardless of lattice matching via van der Waals epitaxy, [20][21][22][23] growth of FTS films requires strict lattice matching condition. In particular, because the in-plane symmetry of FTS film is four-fold, the underlying substrate should also have the same four-fold symmetry.…”

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Hybrid Symmetry Epitaxy of the Superconducting Fe(Te,Se) Film on a Topological Insulator

Yao

Brahlek

et al. 2021

Nano Lett.

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It is challenging to grow an epitaxial four-fold compound superconductor (SC) on six-fold topological insulator (TI) platform due to stringent lattice-matching requirement. Here, we demonstrate that Fe(Te,Se) can grow epitaxially on a TI (Bi2Te3) layer due to accidental, uniaxial lattice match, which is dubbed as "hybrid symmetry epitaxy". This new growth mode is critical to stabilizing robust superconductivity with TC as high as 13 K. Furthermore, the superconductivity in this FeTe1-xSex/Bi2Te3 system survives in Te-rich phase with Se content as low as x = 0.03 but vanishes at Se content above x = 0.56, exhibiting a phase diagram that is quite different from that of the conventional Fe(Te,Se) systems. This unique heterostructure platform that can be formed in both TI-on-SC and SC-on-TI sequences opens a route to unprecedented topological heterostructures.

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“…For film growth, we mounted the BiInSe3 substrate onto a dummy Al2O3 substrate, which acts as sample holder, using PELCO® high performance ceramic adhesive (Ted Pella), then cured the adhesive, cleaved a fresh surface and put it into the MBE chamber right away: more details are included in a previous report [21]. Surface morphology is an important indicator of the quality of a film.…”

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confidence: 99%

Structurally and chemically compatible BiInSe3 substrate for topological insulator thin films

et al. 2020

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Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: the more closely they match, the better the film quality is. Topological insulators (TI) such as Bi2Se3 thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe3 bulk crystal as the best substrate for Bi2Se3 thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe3 substrate. BiInSe3 substrate could accelerate the advance of TI research and applications.

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Record High-Proximity-Induced Anomalous Hall Effect in (Bi_xSb_1–x)₂Te₃ Thin Film Grown on CrGeTe₃ Substrate

Cited by 45 publications

References 36 publications

Intrinsic quantum anomalous Hall phase induced by proximity in the van der Waals heterostructure germanene/ Cr2Ge2Te6

Intrinsic quantum anomalous Hall phase induced by proximity in the van der Waals heterostructure germanene/ Cr2Ge2Te6

Hybrid Symmetry Epitaxy of the Superconducting Fe(Te,Se) Film on a Topological Insulator

Structurally and chemically compatible BiInSe3 substrate for topological insulator thin films

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