Reconstruction at the Ga2Se3/GaAs epitaxial interface

Abstract

A highly developed two dimensional superstructure was found at the Ga2Se3/GaAs epitaxial interface by transmission electron microscope observations. The atomic arrangement of the superstructure was determined by the analysis of electron diffraction patterns and high resolution transmission electron microscope images. The structure is described as a c(2×2) ordered arrangement of vacancies on the interfacial Ga plane. A possible role of the mismatch of electronic configurations at the Ga2Se3/GaAs interface in the formation of the vacancy ordering is discussed.

Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques

“…The LEED pattern in Figure 3-48a displays the (2×1) symmetry of the passivated surface. Previous studies of Sepassivated GaAs surfaces [164][165][166] indicate that the substrate surface is characterized by 1ML of Se dimers bound to second-layer Ga atoms, a layer of Se atoms replacing As atoms in the third layer, and 0.5 ML of Ga vacancies in the fourth layer. The Se dangling bonds (DB) are filled, eliminating states within the GaAs bandgap, thus reducing the substrate/ molecular bond energy.…”

First-principles study of the structure and band structure of Ga2Se3

“…Li et al [63,64] reported a reconstruction layer of Ga 3 Se 4 for the Ga 2 Se 3 epitaxial layer. The structure shown in figure 2 of Li et al [63,64] is related to the monoclinic structure suggested by Lubbers et al [22]. The difference is as follows.…”

Metal adatom induced corrugation of Cu(001)

“…At the low coverage considered here (Θ=0.14), each Pb atom was modeled as a Gaussian bump of 4 Å height and 6.5 Å wide (FWHM). These parameters were obtained from a calculation of the charge density of a Pb adatom [15].…”