Reconfigurable RFICs for frequency-agile VCOs in Si-based technology for multi-standard applications

Mukhopadhyay, R.; Park, Y.; Sen, Padmanava; Srirattana, N.; Lee, J.S.; Nuttinck, S.; Joseph, A.J.; Cressler, John D.; Laskar, J.

doi:10.1109/mwsym.2004.1338856

Cited by 12 publications

(3 citation statements)

References 7 publications

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“…There are few variable inductors in microwave devices. Even though there is an active inductor using a gyrator structure that can change an inductance, a quality factor ( -factor) is not high enough and is changed according to the control voltage [9]. For that reason, the active inductor is not yet widely used.…”

Section: B a Variable Equivalent Inductor And The Gdta Unitmentioning

confidence: 99%

Microwave Group Delay Time Adjuster Using Parallel Resonator

Park

Choi

Jeong

2007

IEEE Microw. Wireless Compon. Lett.

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This letter describes the design of a group delay time adjuster (GDTA) using a parallel resonator. The GDTA consists of a variable capacitor and a variable equivalent inductor. These components are controlled by two bias voltages separately. The variable equivalent inductor is realized using a high impedance transmission line terminated with the variable capacitor. Group delay time can be adjusted by varying the capacitance and the inductance while keeping the fixed resonance frequency. When the proposed GDTA is fabricated on the Korean RFID frequency band (908.5-914 MHz), we could obtain about 3 ns group delay time variation with excellent flatness.

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Section: B a Variable Equivalent Inductor And The Gdta Unitmentioning

confidence: 99%

Microwave Group Delay Time Adjuster Using Parallel Resonator

Park

Choi

Jeong

2007

IEEE Microw. Wireless Compon. Lett.

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“…However, the limited quality factor and dc power consumption are two major issues. Another way to realize the variable inductance is to employ an active inductor [5], [6]. Although the relatively higher tuning range and quality factor can be achieved, it still consumes considerable dc power and has a high noise level.…”

Section: Introductionmentioning

confidence: 99%

A Novel Electrically Tunable RF Inductor With Ultra-Low Power Consumption

Cho

2008

IEEE Microw. Wireless Compon. Lett.

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In this study, we propose for the first time an electrically and continuously tunable RF inductor using grounded metal oxide semiconductor (MOS) transistor as a control device. By adjusting the output resistance of the grounded MOSFET, the ground-return current can lead to a significant variation in series inductance. This proposed inductor structure was implemented in a standard CMOS process and characterized up to 30 GHz, which demonstrates maximum inductance variations of 32% and 58% at 5.8 and 18 GHz, respectively. The dc power consumption of the proposed design is kept within 50 W over the entire tuning range.Index Terms-Eddy current, inductor, metal oxide semiconductor field effect transistor (MOSFET), radio frequency (RF), silicon, tunable.

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“…Electrically (pn-junction varactors; MOS-varactors) and micro-electromechanically (MEMS) tunable capacitors are already available in RF integration processes or are in development, while work on tunable inductors is leaping far behind. High quality factor and highly tunable active inductors have been reported [1], yet their widespread use in integrated RF circuits is impeded by high power consumption, complexity of power handling, high noise level, and nonlinear behavior. There are only a few MEMS approaches to tunable inductors so far [2]- [4].…”

mentioning

confidence: 99%

Integrated Tunable Magnetic RF Inductor

Vroubel

Zhuang

Rejaei

et al. 2004

IEEE Electron Device Lett.

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Abstract-We demonstrate, for the first time to our knowledge, a passive, electrically tunable integrated radio frequency (RF) inductor based on a planar solenoid with a thin-film ferromagnetic(FM) (NiFe) core. Variation of inductance is achieved by leading an additional dc current through the same device, thereby changing the effective permeability of the FM core. Tuning ranges (relative variations in inductance) of 85%, 35%, and 20% are achieved at 0.1, 1, and 2 GHz, respectively, for inductances in the range of 1 to 150 nH.Index Terms-Inductor, on-chip, radio frequency (RF), tunable circuits and devices.

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Reconfigurable RFICs for frequency-agile VCOs in Si-based technology for multi-standard applications

Cited by 12 publications

References 7 publications

Microwave Group Delay Time Adjuster Using Parallel Resonator

Microwave Group Delay Time Adjuster Using Parallel Resonator

A Novel Electrically Tunable RF Inductor With Ultra-Low Power Consumption

Integrated Tunable Magnetic RF Inductor

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