Reconfigurable multi-band, graphene-based THz absorber: Circuit model approach

Aghaee, Toktam; Orouji, Ali A.

doi:10.1016/j.rinp.2019.102855

Cited by 51 publications

(24 citation statements)

References 63 publications

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“…Finally, a continuous graphene sheet is placed on top of the whole device to enhance total absorption. Compared to conventional designs in References 1‐12, two first layers benefit from an extra bias, which leads to more degree of freedom to adjust input impedance using external control parameters (gate biasing).…”

Section: Proposed Configurationmentioning

confidence: 99%

“…Also, some works try to report reconfigurable THz absorber in different operational modes. [4][5][6] These works usually tend to increase device sensitivity vs chemical potential or bias values. All mentioned works exploited developed circuit representation for graphene patterns to simplify design and simulations.…”

Section: Introductionmentioning

confidence: 99%

“…This work provides some information regarding real scenario biasing. Also, some works try to report reconfigurable THz absorber in different operational modes 4‐6 . These works usually tend to increase device sensitivity vs chemical potential or bias values.…”

Section: Introductionmentioning

confidence: 99%

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Highly tunable multi‐band THz absorber with circuit model representation using multi‐bias scheme

Aghaee

Orouji

2020

Int J Numerical Modelling

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Utilizing a double bias scheme for graphene patterns as a single layer, a THz meta-surface structure is proposed. The structure includes two dual bias layers and a graphene continuous sheet on top. So five possible biases are available which lead to a highly tunable absorption response. All consisting parts are modeled via passive circuit elements to obtain whole device input impedance. Then impedance matching theory is used to investigate potential frequencies for perfect absorption. Also, ample simulations are performed to show the validity and accuracy of theoretical descriptions. According to the simulation results in the conventional finite element method as a reference approach is in acceptable agreement with the developed circuit model approach. The proposed structure shows nearly perfect absorption in 5, 6, 7, and 8 THz with absorption rate over 90%. Such a tunable reaction is in incredible requests in optical systems and has various applications in structuring sensors, modulators, and photonic functions.

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Section: Proposed Configurationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Highly tunable multi‐band THz absorber with circuit model representation using multi‐bias scheme

Aghaee

Orouji

2020

Int J Numerical Modelling

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“…This limits control ability severely since chemical potential values cannot exceed more than 1 eV, otherwise, chemical reactions occur. This may relate to the ultra-thin layer of graphene [21].…”

Section: Introductionmentioning

confidence: 99%

Graphene-based THz absorber: adjustability via multiple gate biasing

Cyrus¹,

Biabanifard²

2021

Heliyon

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A multi-layer absorber using multi-bias arrays of graphene is proposed. The design methodology using the equivalent circuit model and matching concept is described. A heavy optimization process is performed to optimize bias values for different functionality. Leveraging, increased control parameters due to multi-bias scheme and simple circuit model representation, two operational modes are achieved as wide-band and multiband absorption. The proposed absorber can perfectly absorb THz incident waves between 5:2 THz À 6:3 THz in wide-band mode while shows perfect absorption response in 5:3 THz; 7:5 THz; 8 THz; 8:5 THz; 9 THz; and 9:5 THzin multi-band operational mode. Besides, response dependency to layers thicknesses, electron relaxation time, chemical potentials, and incident angle are reported to express acceptable sensitivity of the device. Such a reconfigurable absorber is in demand for several applications, ranging from medical imaging to indoor communication.

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“…Until now, numerous works have investigated MAs in wide variety of applications such as security imaging, biomedical detection, indoor communications, and energy harvesting 2–8 . Most of state of art studies have been concentrated on the desired frequency range to achieve broadband, 9 perfect tunable, 10 multi‐band, 11 and dual‐band 12 absorbing responses. Instead, some systemic design procedures are introduced to design MAs at THz spectrum.…”

Section: Introductionmentioning

confidence: 99%

Manipulating pattern periods via external bias for graphene‐based THz Dual‐Band absorber

Aghaee

Orouji

2021

Micro & Optical Tech Letters

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Electrical control of terahertz (THz) radiation for high‐performance THz imaging is the key point. The spectrum suffers from a lack of active and available materials such as graphene have a severely limited bias range leading to restricted tuning. Therefore, here we demonstrated an efficient tunable device exploiting a triple bias layer for patterned graphene ribbons. Here, the patterned graphene acts as a tunable surface impedance leads to electrically controlled impedance matching between the device and free space. So, a dual‐band absorption is obtained which is appropriately robust against incident angle and capable of adjusting absorption peaks. The major contribution of the design is capability of manipulating patterns periods via gate biasing. This causes providing additional degree of freedom compared to conventional graphene patterns. According to the simulation results, the proposed device shows excellent tuning operation via gate bias voltages.

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Reconfigurable multi-band, graphene-based THz absorber: Circuit model approach

Cited by 51 publications

References 63 publications

Highly tunable multi‐band THz absorber with circuit model representation using multi‐bias scheme

Highly tunable multi‐band THz absorber with circuit model representation using multi‐bias scheme

Graphene-based THz absorber: adjustability via multiple gate biasing

Manipulating pattern periods via external bias for graphene‐based THz Dual‐Band absorber

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