Reconfigurable magnetoelectronic circuits for threshold logic

Abstract

SUMMARYMagnetoelectronic devices, which combine ferromagnetic materials with conventional silicon structures, o er the potential to add non-volatile storage to electronic systems, eliminating their vulnerability to data loss due to power supply interruptions. We present a set of circuits, based on the Hybrid Hall E ect device, that combine logic with non-volatile storage. These circuits can be conÿgured on a cycleby-cycle basis to compute di erent functions of their inputs, store their outputs indeÿnitely even in the absence of system power, and can be easily integrated into CMOS systems to provide non-volatile operation without requiring additional supply voltages or other global signals. They exploit the properties of the Hybrid Hall E ect device to e ciently implement threshold logic functions and thereby reduce the number of gates required to implement most Boolean expressions.In this paper, we describe our reconÿgurable magnetoelectronic circuits and the interfaces that make them compatible with CMOS systems. The results presented are based on data from fabricated experimental devices, and we discuss how they can be expected to improve as devices scale to nanometer dimensions. Finally, we consider how magnetoelectronic circuits might be integrated into system designs to deliver high performance while tolerating power supply interruptions.

Sixteen logic functions in a single electronic circuit

“…Some of these using magnetic materials. 20,21 In Bae et al 22 they obtain 14 out 16 boolean functions with magnetic tunnel junction gates using magnetic field properties and spin torque of the circuit input terminal as physical variables, functions XOR and XNOR, are obtained by cascading these devices to obtain the full 16 function set. Matsuno et al 23 proposed a reconfigurable circuit using a magnetic transistor called spin MOSFET; a similar concept was introduced recently by Luo et al, 24 where they generate basic logic gates using spinning electromagnetic nanostructures called skyrmions.…”

“…An interesting topic is the generation of basic logic gates with reconfiguration properties. Some of these using magnetic materials 20,21 . In Bae et al 22 they obtain 14 out 16 boolean functions with magnetic tunnel junction gates using magnetic field properties and spin torque of the circuit input terminal as physical variables, functions XOR and XNOR, are obtained by cascading these devices to obtain the full 16 function set.…”

An MTJ‐based non‐volatile flip‐flop for high‐performance SoC

“…Therefore, the leakage current cannot be completely removed. To completely remove the leakage current in the standby mode, many researches are underway on the non‐volatile flip‐flop and logic . The magnetic tunneling junction (MTJ) is effective memory element for non‐volatile flip‐flop, because it is durable and fits the existing CMOS process .…”