Reconfigurable frequency multipliers based on graphene field-effect transistors

Abstract

Run-time device-level reconfigurability has the potential to boost the performance and functionality of numerous circuits beyond the limits imposed by the integration density. The key ingredient for the implementation of reconfigurable electronics lies in ambipolarity, which is easily accessible in a substantial number of two-dimensional materials, either by contact engineering or architecture device-level design. In this work, we showcase graphene as an optimal solution to implement high-frequency reconfigurable electronics. We propose and analyze a split-gate graphene field-effect transistor, demonstrating its capability to perform as a dynamically tunable frequency multiplier. The study is based on a physically based numerical simulator validated and tested against experiments. The proposed architecture is evaluated in terms of its performance as a tunable frequency multiplier, able to switch between doubler, tripler or quadrupler operation modes. Different material and device parameters are analyzed, and their impact is assessed in terms of the reconfigurable graphene frequency multiplier performance.

Analysis of a Graphene FET-Based Frequency Doubler for Combined Sensing and Modulation through Compact Model Simulation

“…The adopted mode was presented in [26] and validated in [27]. The model reproduced successfully the non linear behaviour of GFET-based ambipolar components for RF applications [28][29][30], prov ing to be a valuable tool for the purpose of predicting the GFET frequency doubler's per formance. The device model considered in our simulations is the top-gated graphene FE described in [19].…”