Reconfigurable amplifier towards enhanced selectivity of future multi-band mobile terminals

Okumura, Hiroshi; Kawai, Kunihiro; Fukuda, Atsushi; Furuta, Takayuki; Narahashi, Shoichi

doi:10.1109/imws.2010.5441012

Cited by 9 publications

(4 citation statements)

References 6 publications

(3 reference statements)

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“…Thus, the frequency response adjustment of the LNA is effective in the gain suppression problem caused by out-of-band signals as well as filter response improvement. (Okazaki, et al, 2010)…”

Section: Filters and Lnasmentioning

confidence: 99%

Rf Front-End Considerations for Future Multiband Mobile Terminals

Okumura¹,

Furuta²,

Kawai³

et al. 2013

Proceedings of the 2nd International Conference on Telecommunications and Remote Sensing

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A Radio Frequency (RF) front-end (RF-FE) is one of the keys in multi-mode and multi-band mode mobile terminals. In conventional cellular phones, multiple RF-FEs are installed for multi-band use. There have been a lot of studies of achieving multi-band or broadband circuits that comprise a compact and costeffective multi-band RF-FE with adequate RF performance. Reconfigurable or tunable RF-FEs are a way to provide multi-band function in future mobile terminals, which takes into consideration the capability to support a large number of wireless systems that use different frequency bands. However, the performance degradation should be considered if adaptive circuits are installed in the RF-FE. This paper presents considerations for the issues that might occur in a multi-band RF-FE for future mobile terminals. As an example, a concept of collaboration between a top RF filter and low-noise amplifier (LNA) is presented.

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Section: Filters and Lnasmentioning

confidence: 99%

Rf Front-End Considerations for Future Multiband Mobile Terminals

Okumura¹,

Furuta²,

Kawai³

et al. 2013

Proceedings of the 2nd International Conference on Telecommunications and Remote Sensing

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“…Apparently this method suffers from high power dissipation, a large chip area and therefore a significant increase in cost. Recently the switched or reconfigurable LNAs by capacitors, inductors, transistors or RF micro electro mechanical systems (MEMS) have also been reported [4][5][6][7][8][9]. However, this degrades the noise figure, and only one band can be selected at a time.…”

Section: Introductionmentioning

confidence: 99%

Design of Concurrent Low-Noise Amplifier for Multi-Band Applications

Ning¹,

Lei²,

Zhang³

et al. 2011

PIER C

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A concurrent multi-band low-noise amplifier (LNA) for both WLAN and WiMAX applications covering 2.4-2.7 GHz, 3.3-3.8 GHz and 5.1-5.9 GHz is mainly investigated. The proposed LNA consists of two cascaded common-source stages and employs steppedimpedance transformers and series and shunt feedback techniques to obtain good return loss, low noise and high linearity simultaneously. Test results show that the LNA features input and output return loss of 12 dB, gain of 21 dB, and noise figure of 2 dB across the three bands of operation, which are the state of the art among the counterparts.

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“…RF-MEMS together with active circuitry (such as lownoise/power amplifiers) have with a few notable exceptions mainly been realised up to 5-10 GHz (see, e.g., [4][5][6][7][8][9][10][11][12][13][14]) which still leaves room for significant improvements to be made with respect to RF performance, frequency range, and functionality as well as to achieve reduced complexity and lower costs. Measured s-parameter data of a 26-30 GHz MEMS-switched transmit/receive circuit was reported in [5].…”

Section: Introductionmentioning

confidence: 99%

A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit

Malmqvist

Samulesson

Gustafsson

et al. 2011

Active and Passive Electronic Components

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A K-band (18-26.5 GHz) RF-MEMS-enabled reconfigurable and multifunctional dual-path LNA hybrid circuit (optimised for lowest/highest possible noise figure/linearity, resp.) is presented, together with its subcircuit parts. The two MEMS-switched low-NF (higher gain) and high-linearity (lower gain) LNA circuits (paths) present 16.0 dB/8.2 dB, 2.8 dB/4.9 dB and 15 dBm/20 dBm of small-signal gain, noise figure, and 1 dB compression point at 24 GHz, respectively. Compared with the two (fixed) LNA subcircuits used within this design, the MEMS-switched LNA circuit functions show minimum 0.6-1.3 dB higher NF together with similar values of P 1 dB at 18-25 GHz. The gain of one LNA circuit path is reduced by 25-30 dB when the MEMS switch and active circuitry used within in the same switching branch are switched off to select the other LNA path and minimise power consumption.

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Reconfigurable amplifier towards enhanced selectivity of future multi-band mobile terminals

Cited by 9 publications

References 6 publications

Rf Front-End Considerations for Future Multiband Mobile Terminals

Rf Front-End Considerations for Future Multiband Mobile Terminals

Design of Concurrent Low-Noise Amplifier for Multi-Band Applications

A K-Band RF-MEMS-Enabled Reconfigurable and Multifunctional Low-Noise Amplifier Hybrid Circuit

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