Reconciling Nano- and Micro-Scale VLS Growth by Including Multi-Scale Supersaturation: A Growth Model Applied to Lateral Ge Films on Si

Suwito, Galih R.; Quitoriano, Nathaniel J.

doi:10.1109/tnano.2021.3097731

Cited by 3 publications

(4 citation statements)

References 27 publications

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“…These results suggest that the Au islands closer to the opening have larger lateral InP films, hence, stronger EDS peaks of In and P [21]. Another mechanism might play a role in this growth process: since the Au islands closer to the opening are smaller, they required less In and P adatoms to reach a supersaturation and begin a VLS growth [13]. Figure 5(e) shows the EDS spectra of line scan (e) in figure 5(a).…”

Section: Figures 1(g) and (H) Show Plan-view Sem Micrographs At 20 Kv...mentioning

confidence: 90%

Section: Figures 1(g) and (H) Show Plan-view Sem Micrographs At 20 Kv...mentioning

confidence: 99%

“…With this method, high-quality 4% latticemismatched Ge micro-films on Si have been demonstrated [12] with a fine control on the kinetics by controlling the catalyst size (i.e. supersaturation) [13] and geometry (i.e. liquidvapour interface) [14].…”

Section: Introductionmentioning

confidence: 99%

“…∼5 Pa), that smaller Au catalysts are easier to start a VLS growth because it requires a smaller precursor dose to reach a supersaturation state[13]. This shows that the adatom surface diffusion under the capping layers is the dominant growth mechanism in CBE, where the growth pressures are orders of magnitude smaller than used in CVD[10][11][12][13][14].The good alignment of Au, In, and P peaks in figure 4(d) is not observed in figure4(e), where In and P peaks do not with any apparent Au peaks. This finding suggests that these In P signals, shown in figure4(e-iv, v), from an unintentionally nucleated that was grown on top of the capping layer.…”

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confidence: 99%

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Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

Suwito,

Haffouz,

Dalacu

et al. 2024

J. Phys. D: Appl. Phys.

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We reported nucleation mechanisms of InP directly on Si (8% lattice mismatch) under confined structures, called micro-crucibles, at ultra-high vacuum (UHV) by chemical beam epitaxy (CBE). These micro-crucibles are used to induce lateral growth in the presence of a micro-scale Au catalyst. It is found that at this UHV condition, the kinetics is dictated predominantly by adatom surface diffusion. Using a two-step growth process ((1) In-only exposure, then, (2) simultaneous In and P exposures), InP islands have been successfully nucleated on Si substrates under micro-crucible structures. The nucleation of these InP islands strongly depends on the metal catalyst location relative to the micro-crucible opening with metal catalysts residing closer to the opening having a higher chance to get incorporated with In and P atoms. Importantly, we found that using smaller micro-crucibles with double openings can increase the possibility of having metal catalysts reside near either opening and nucleate InP under micro-crucibles.

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Section: Figures 1(g) and (H) Show Plan-view Sem Micrographs At 20 Kv...mentioning

confidence: 90%

Section: Figures 1(g) and (H) Show Plan-view Sem Micrographs At 20 Kv...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

Suwito,

Haffouz,

Dalacu

et al. 2024

J. Phys. D: Appl. Phys.

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Prefabrication Analysis and Numerical Modeling of Freely Supported MEMS Piezoresistive Pressure Sensor Employing Square Shaped Silicon Diaphragm

Kanekal,

Jindal

2023

2023 IEEE 20th India Council International Conference (INDICON)

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Tuning the Liquid–Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures

et al. 2023

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Controlling the morphology and composition of semiconductor nano- and micro-structures is crucial for fundamental studies and applications. Here, Si-Ge semiconductor nanostructures were fabricated using photolithographically defined micro-crucibles on Si substrates. Interestingly, the nanostructure morphology and composition of these structures are strongly dependent on the size of the liquid–vapour interface (i.e., the opening of the micro-crucible) in the CVD deposition step of Ge. In particular, Ge crystallites nucleate in micro-crucibles with larger opening sizes (3.74–4.73 μm2), while no such crystallites are found in micro-crucibles with smaller openings of 1.15 μm2. This interface area tuning also results in the formation of unique semiconductor nanostructures: lateral nano-trees (for smaller openings) and nano-rods (for larger openings). Further TEM imaging reveals that these nanostructures have an epitaxial relationship with the underlying Si substrate. This geometrical dependence on the micro-scale vapour–liquid–solid (VLS) nucleation and growth is explained within a dedicated model, where the incubation time for the VLS Ge nucleation is inversely proportional to the opening size. The geometric effect on the VLS nucleation can be used for the fine tuning of the morphology and composition of different lateral nano- and micro-structures by simply changing the area of the liquid–vapour interface.

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Reconciling Nano- and Micro-Scale VLS Growth by Including Multi-Scale Supersaturation: A Growth Model Applied to Lateral Ge Films on Si

Cited by 3 publications

References 27 publications

Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

Nucleation of InP on Si under micro-crucibles at ultra-high vacuum using a two-step VLS process

Prefabrication Analysis and Numerical Modeling of Freely Supported MEMS Piezoresistive Pressure Sensor Employing Square Shaped Silicon Diaphragm

Tuning the Liquid–Vapour Interface of VLS Epitaxy for Creating Novel Semiconductor Nanostructures

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