Recombination processes and photoluminescence intensity in quantum wells under steady-state and transient conditions

Brandt, O.; Kanamoto, Kyozo; Gotoda, Mitsunobu; Isu, Toshiro; Tsukada, Noriaki

doi:10.1103/physrevb.51.7029

Cited by 22 publications

(17 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…We neglect Auger processes, excitonic recombination ͑which may be important in the low-temperature regime͒, nonradiative recombination with interface traps ͑which may be relevant in the low-laser-intensity regime and at high temperatures͒, spatial diffusion, and drift. [7][8][9][10][11][12][13][14][15][16][17][18][19] In the following, we work within the effective-mass approximation and the parabolic-band model for describing both electrons and holes; for simplicity, we consider one hole band with a spherical carrier effective mass m v ϭ0.3m 0 , with m 0 being the free-electron mass, which results in a bulk value of 26 meV for the acceptor binding energy, in agreement with experiment. 20 Moreover, we limit ourselves to radiative recombination of nϭ1 conduction subband electrons with either free holes at the nϭ1 valence subband or with bound holes at neutral acceptors homogeneously distributed within the GaAs-͑Ga,Al͒As QWW.…”

Section: Theoretical Modelmentioning

confidence: 78%

“…11 The experimental data by Ding et al 10 and Bongiovanni and Staehli 11 were analyzed in a detailed study by Oliveira and de Dios-Leyva 12 on the steady-state PL of GaAs-͑Ga,Al͒As QW's. In a recent work, Brandt et al 13 presented a theoretical and experimental study of recombination processes and PL intensity in QW's under steady-state and transient conditions.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Radiative recombination in cylindrical GaAs-(Ga,Al)As quantum-well wires under quasistationary excitation conditions

1996

View full text Add to dashboard Cite

A quantum-mechanical calculation of radiative recombinations in cylindrical GaAs-͑Ga,Al͒As quantum-well wires excited by a cw laser in a photoluminescence experiment under quasistationary excitation conditions is performed. We work within the effective-mass approximation and the parabolic-band model for describing both electrons and holes, and consider, in the steady state, the interband absorption, and some radiative recombination mechanisms, such as recombination of electrons with free holes and with holes bound at acceptors. Carrier densities and electron-hole recombination decay times are calculated at room temperature and as functions of the laser intensity. For doped quantum-well wires, it is shown that the presence of acceptors substantially modifies the dependence on the laser intensity of the above quantities.

show abstract

Section: Theoretical Modelmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Radiative recombination in cylindrical GaAs-(Ga,Al)As quantum-well wires under quasistationary excitation conditions

1996

View full text Add to dashboard Cite

show abstract

“…225 This is a well-established approach for characterizing complex, multiprocess recombination dynamics in bulk and nanostructured materials. 34,322,323 Experimental I em versus I exc along with results from the fitting routine are shown in Figure 31B. Individual trapped electron and continuum carrier concentrations at various I exc are displayed in Figure 31C.…”

Section: Recombination Mechanismsmentioning

confidence: 98%

Intriguing Optoelectronic Properties of Metal Halide Perovskites

2016

View full text Add to dashboard Cite

A new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewed with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CHNHPbI) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2-dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.

show abstract

“…As we observe a change in the radiative lifetime, we can rule out that the increase of the PL intensity is induced by an enhanced exciton generation rate due to the altered surface, since the excitonic radiative lifetime does not depend on the generation rate. 27 Two important points have to be stressed in this context: ͑i͒ Electrical measurements on NWs with exceptionally large diameters ͑d = 200 nm͒ did not yield any detectable current indicating complete depletion. The alignment of the conduction and valence bands across the NW diameter can be obtained by solving the Poisson equation in cylindrical geometry.…”

mentioning

confidence: 99%

Unpinning the Fermi level of GaN nanowires by ultraviolet radiation

Pfüller

Brandt²,

Grosse³

et al. 2010

Phys. Rev. B

View full text Add to dashboard Cite

International audienceWe observe a significant increase in the photoluminescence intensity of GaN nanowires under continuous ultraviolet irradiation on a time scale of minutes. Experiments carried out under different ambient conditions demonstrate that this increase is caused by the photoinduced desorption of oxygen from the nanowire side-walls. The slow, highly nonexponential temporal evolution of the photoluminescence signal is modeled by a random-walk approach. The model reveals that already desorbed oxygen molecules are likely to be readsorbed at adjacent nanowires. Time-resolved photoluminescence measurements are performed to unravel the correlation between the oxygen desorption and the increase in the photoluminescence intensity. We find that the oxygen desorption unpins the Fermi level, which in turn leads to an increase in quantum efficiency by enhancing the radiative decay of excitons

show abstract

Recombination processes and photoluminescence intensity in quantum wells under steady-state and transient conditions

Cited by 22 publications

References 30 publications

Radiative recombination in cylindrical GaAs-(Ga,Al)As quantum-well wires under quasistationary excitation conditions

Radiative recombination in cylindrical GaAs-(Ga,Al)As quantum-well wires under quasistationary excitation conditions

Intriguing Optoelectronic Properties of Metal Halide Perovskites

Unpinning the Fermi level of GaN nanowires by ultraviolet radiation

Contact Info

Product

Resources

About