Recombination in the end regions of pin diodes

Berz, F.; Cooper, R. W.; Fagg, S.

doi:10.1016/0038-1101(79)90039-x

Cited by 47 publications

(9 citation statements)

References 15 publications

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“…At a density of 10 20 cm −3 , a high-temperature Auger recombination coefficient of 4 × 10 −30 cm 6 /s [32] results in a lifetime of 25 ps. Moreover, the total conductivity of silicon [33] and the mobility of the electrons and holes [34] decrease with temperature. Further mobility reductions occur due to electron-hole scattering at high carrier densities [34].…”

Section: Laser Intensity Distribution and Modification Mechanismsmentioning

confidence: 99%

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Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Verburg¹,

Römer²,

Veld³

2014

Opt. Express

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Three-dimensional bulk modification of dielectric materials by multiphoton absorption of laser pulses is a well-established technology. The use of multiphoton absorption to machine bulk silicon has been investigated by a number of authors using femtosecond laser sources. However, no modifications confined in bulk silicon, induced by multiphoton absorption, have been reported so far. Based on results from numerical simulations, we employed an erbium-doped fiber laser operating at a relatively long pulse duration of 3.5 nanoseconds and a wavelength of 1549 nm for this process. We found that these laser parameters are suitable to produce modifications at various depths inside crystalline silicon.

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Section: Laser Intensity Distribution and Modification Mechanismsmentioning

confidence: 99%

“…Moreover, the total conductivity of silicon [33] and the mobility of the electrons and holes [34] decrease with temperature. Further mobility reductions occur due to electron-hole scattering at high carrier densities [34].…”

Section: Laser Intensity Distribution and Modification Mechanismsmentioning

confidence: 99%

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Verburg¹,

Römer²,

Veld³

2014

Opt. Express

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“…This behavior can be attributed to the low current biasing conditions ͑i m contribution to i not negligible͒, as already observed in Ref. 51. Therefore, one may admit that there is a transition between a conduction current based on carrier recombination to another based on carrier diffusion at the PN − and N − N + junctions.…”

Section: ͓21͔mentioning

confidence: 78%

Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities

Perpiñà

Jordà

Vellvehı́

et al. 2010

J. Electrochem. Soc.

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The combination of emitter control with local lifetime tailoring by ion irradiation is experimentally analyzed in fast-recovery high power diodes. For this purpose, the carrier lifetime and excess carrier concentration profiles are measured and modeled within the low doped region of unirradiated and helium irradiated diodes under low current densities ͑Ͻ20 A/cm 2 ͒. The interest in working under these current conditions responds to the fact that the only recombination mechanism that modulates the steady-state carrier concentration is that of the multiphonon-assisted case ͑Shockley-Read-Hall model͒. This enables us to extract parameters for their modeling under arbitrary working conditions and to detect the influence of ion irradiation on the excess carrier distribution. For a better comprehension of the results, the excess carrier profile in the unirradiated diode is physically analyzed in detail by an analytical model. Afterward, physical simulations are also carried out, employing the experimental lifetime profiles as input parameters. As a result, a very good agreement between simulation predictions and experiments is observed, which is used to explain, by the support of analytical expressions, how the ion-irradiation process can improve the diode operation at low current densities during the late phase of the reverse recovery.The main difference between low and high power discrete bipolar diodes is the presence of a thick low N-doped layer ͑drift region͒ between highly P-and N-doped layers ͑emitters͒, which allows high power diodes reaching blocking voltages in the kilovolt range.During the blocking state ͑off-state͒, the drift region is gradually depleted until the full bus voltage is sustained by the PN − junction.In an on-state, carriers are injected from the highly doped layers into the drift region, finally reaching an excess carrier concentration much higher than that of the doping level ͑high injection condition͒. Such a physical effect changes the initial resistivity of this layer ͑conductivity modulation͒, highly reducing the power losses during the on-state.The transition from an on-state to an off-state ͑reverse recovery͒ requires a certain time ͑reverse recovery time͒ because the device drift region stores a large amount of excess carriers that should be removed. This removal time increases as the drift region is thicker. Additionally, it is required that for a safe reverse recovery process, the current flowing across the diode shows a smooth decay ͑soft behavior͒ without oscillations ͑snappy behavior͒, and the reverse current peak should be as small as possible. 1 Nowadays, two strategies are basically used to improve the reverse recovery response of power diodes: the emitter 2 and lifetime engineering. 3 There also exist sophisticated methods that utilize special PNP structures at the cathode side, e.g., field charge extraction 4 or controlled injection of back-side holes͒ 5 diodes. However, their implementation is more complicated and not without compromises. The emitter and lifetime engineerin...

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“…Assuming equal electron and hole concentrations and Shockley-Read-Hall recombinations, the carrier distribution in the intrinsic region is governed by the ambipolar diffusion equation: To take into account recombination currents in the emitters, the boundary conditions for (1) at the P -I 0 and I-N junctions can be written as [7] (2) (3) where and are emitter recombination parameters defined in [7]. It has been demonstrated that recombination currents in the end regions can be described by the term [5] for each boundary condition in (2) and (3). These additional terms improve the accuracy of the total diode impedance, especially in the case of thin p-i-n diodes.…”

Section: Model Descriptionmentioning

confidence: 99%

“…In the case of thick diodes, most injected carriers recombine in the base and do not reach the end regions. However, for p-i-n diodes with small base length to diffusion length ratio, recombinations in the heavily doped end regions [5], [6] seriously affect the total diode impedance. In this case, the diode impedance is overestimated at low frequencies and underestimated at high frequencies.…”

mentioning

confidence: 99%

An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance

Gatard¹,

Sommet²,

Bouysse³

et al. 2007

IEEE Microw. Wireless Compon. Lett.

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Abstract-An improved formulation of the frequency-dependent impedance for p-i-n diodes from physical and geometrical parameters is presented. This work is addressed to diode designers and allows them to evaluate quickly and accurately the diode impedance. It comes in parallel with existing SPICE p-i-n diode model [1] used in CAD software. Under forward bias conditions, important recombinations occur in the heavily doped end regions of thin p-i-n diodes that seriously affects the diode impedance. This effect is taken into account to increase the accuracy of existing numerical models and to extend their validity domain to any I-region thicknesses. This improvement has been validated by measurement results on a 5-m I-region width silicon p-i-n diode.Index Terms-Bias-dependent impedance, carrier lifetime, forward bias, p-i-n diode, recombinations.

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Recombination in the end regions of pin diodes

Cited by 47 publications

References 15 publications

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Two-photon–induced internal modification of silicon by erbium-doped fiber laser

Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities

An Improved Physics-Based Formulation of the Microwave p-i-n Diode Impedance

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