Recombination in GaAs at the AlAs oxide-GaAs interface

Kash, J. A.; Pezeshki, B.; Agahi, F.; Bojarczuk, N. A.

doi:10.1063/1.114774

Cited by 28 publications

(8 citation statements)

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“…In the area at the vicinity of the holes, the photoluminescence intensity is five times greater in the apertures between the oxidation fronts than in the fully oxidized zones. This may be due to the presence in the oxide zone of GaAs / AlOx interfaces that promotes non-radiative recombination which reduces the PL emission in this interfacial region [6][7][8]. Indeed, we observed the same result for structures where the oxide was formed after the epitaxy of the entire structure with a surface layer of 200 nm (standard lateral oxidation process).…”

Section: Micro-photoluminescence Characterizationssupporting

confidence: 81%

Three dimensional confinement technology based on buried patterned AlOx layers: Potentials and applications for VCSEL arrays

Almuneau

Chouchane

Calvez

et al. 2013

2013 15th International Conference on Transparent Optical Networks (ICTON)

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A new planar technology for flexible and versatile confinement design schemes based on patterned oxide layers is presented. This method of electrical and optical confinement is an improvement over the conventional and widely used lateral oxidation, since it allows to define, from a planar surface, the confined areas. This new technique is particularly suitable for the realization of integrated photonic components arrays such as for VCSELs. First demonstrations show that the oxidation and epitaxial regrowth can be sequenced in a device process flow, leading to successful confinement while preserving good radiative properties.

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Section: Micro-photoluminescence Characterizationssupporting

confidence: 81%

Three dimensional confinement technology based on buried patterned AlOx layers: Potentials and applications for VCSEL arrays

Almuneau

Chouchane

Calvez

et al. 2013

2013 15th International Conference on Transparent Optical Networks (ICTON)

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“…Interface passivation is a critical factor affecting semiconductor device performance, particularly for GaAs-based devices that can have high surface recombination velocities [22]. As the dimension of devices shrinks, the increasing surface-to-volume ratio may further degrade the device performance.…”

Section: Interface Passivation Studymentioning

confidence: 99%

Deep-Etched Native-Oxide-Confined High-Index-Contrast AlGaAs Heterostructure Lasers With 1.3 $\mu$m Dilute-Nitride Quantum Wells

Liang

Wang

Huang

et al. 2007

IEEE J. Select. Topics Quantum Electron.

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Using a modified, O 2 -enhanced nonselective wet thermal oxidation process, deep-etched ridge waveguides in AlGaAs heterostructures containing λ = 808 nm InAlGaAs single quantum well or aluminum-free λ = 1.3 µm GaAsP/InGaAsN dilute nitride multi-quantum-well active regions have been directly oxidized to effectively provide simultaneous electrical isolation, interface state passivation, and sidewall roughness reduction. The resulting highindex-contrast (HIC) ridge waveguide (RWG) diode lasers show improved performance relative to conventional shallow-etched devices owing to both strong optical confinement and the complete elimination of current spreading, with 5 µm stripe width dilutenitride devices showing up to a 2.3 times threshold reduction and strong index guiding for kink-free operation. Oxidation of an AlGaAs graded-index separate confinement heterostructure is studied for varying O 2 concentrations, and the interface passivation effectiveness of the native oxide is studied through comparison with deposited SiO 2 and via a study of the stripe-width dependence of internal quantum efficiency and modal loss. The HIC RWG structure is shown to enable the operation of half-racetrack-ringresonator lasers with a bend radius as small as r = 6 µm.

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“…Observation of the bottom interface shows that most of the defects appear to be confined to within the 300 nm AlGaAs layer adjacent to the oxide. A recent study of photoluminescence lifetime 16 which showed that the interface recombination in the GaAs layer below the AlGaAs layer is unaffected by the oxidation, gives further evidence of the confinement of the defects. However, strain fields of the defects may affect device performance when the active layer is close to the oxide interface, consistent with the observation of rapid failure in VCSEL structures studied by Huffaker et al 4 where the active region was about 20 nm from the oxide interface.…”

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confidence: 95%

Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation

Guha

Agahi

Pezeshki

et al. 1996

Applied Physics Letters

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We have carried out a transmission electron microscopy based study of AlGaAs–Al(oxide) heterolayers created by lateral sidewall wet oxidation and identify the oxide phase formed as a consequence of the oxidation of AlAs to be γ-Al2O3, with the cubic Fd 3m structure. The oxide-semiconductor interface is weak and porous, possibly due to the high stress loads developed during oxidation, and we propose that the fast oxidation rates are a consequence of reactants transported to the oxidation front along the porous interface.

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Recombination in GaAs at the AlAs oxide-GaAs interface

Cited by 28 publications

References 0 publications

Three dimensional confinement technology based on buried patterned AlOx layers: Potentials and applications for VCSEL arrays

Three dimensional confinement technology based on buried patterned AlOx layers: Potentials and applications for VCSEL arrays

Deep-Etched Native-Oxide-Confined High-Index-Contrast AlGaAs Heterostructure Lasers With 1.3 $\mu$m Dilute-Nitride Quantum Wells

Microstructure of AlGaAs-oxide heterolayers formed by wet oxidation

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