Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown 
by Molecular Beam Epitaxy

Akimoto, R.

doi:10.1007/s11664-018-6090-3

Journal of Elec Materi

2018

DOI: 10.1007/s11664-018-6090-3

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Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown by Molecular Beam Epitaxy

R. Akimoto

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Cited by 3 publications

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“…The image of the green channel shows an intensity fluctuation with irregular shapes of sizes 1-2 μm, reflecting a spatial distribution pattern of non-radiative centers. 21) In contrast, bright circular spots are visible both in the yellow and red channels, and the spot density increases gradually toward the area of high electron dose. The diameter (FWHM) of the spots that are isolated from others is approximately 0.5 μm, which corresponds to the condition of diffraction-limited resolution.…”

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CdSe quantum dot formation induced by electron beam irradiation

Akimoto¹

2022

Jpn. J. Appl. Phys.

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The formation of quantum dots (QDs) induced by electron beam irradiation onto a highly strained CdSe layer on ZnSe (001) is investigated. In situ reflection high-energy electron diffraction is used for dual purposes: QD formation by electron beam irradiation and monitoring the progress of surface morphology. QD formation is confirmed by observation of nanoscale three-dimensional islands using transmission electron microscopy. It is also verified by imaging of an isolated single QD emission at room temperature by photoluminescence microscopy. Electron-beam-irradiation increases QD size both in height and lateral directions, resulting in shift of emission from green to yellow spectral region.

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CdSe quantum dot formation induced by electron beam irradiation

Akimoto¹

2022

Jpn. J. Appl. Phys.

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A comparative study of the operational characteristics of CdSe quantum dots and BeZnCdSe quantum well laser diodes

Akimoto

2020

Journal of Applied Physics

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In this study, the operational durability of laser diodes (LDs) with CdSe quantum dot (QD) active region is examined through a detailed comparison with its BeZnCdSe quantum well (QW) counterpart. To focus on the impact on the difference caused by the nature of the active region, other layers such as the waveguide layer, cladding layer, and contact layer, which influence the mode profile of the optical confinement and electrical properties, are maintained under the same condition. Although the threshold current of the CdSe QD LD is higher than that of the BeZnCdSe QW LD by a factor of 1.6–1.7 under a fresh condition, the degradation of the former proceeds much more slowly than that of the latter. This is confirmed by a reliability test conducted under the current injection condition both below and above the lasing threshold. The result indicates that the stronger carrier localization in the CdSe QDs compared to that in the BeZnCdSe QWs prevents the interaction with remote defects in the active layer. Consequently, the CdSe QD LD is less sensitive to degradation due to recombination-enhanced defect reactions.

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Strain-induced composition-dependent phonon and thermodynamical characteristics of BeZnX chalcogenide alloys and BeX/ZnX superlattices

Talwar

2022

Eur. Phys. J. Plus

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Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown by Molecular Beam Epitaxy

Cited by 3 publications

References 18 publications

CdSe quantum dot formation induced by electron beam irradiation

CdSe quantum dot formation induced by electron beam irradiation

A comparative study of the operational characteristics of CdSe quantum dots and BeZnCdSe quantum well laser diodes

Strain-induced composition-dependent phonon and thermodynamical characteristics of BeZnX chalcogenide alloys and BeX/ZnX superlattices

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