2005
DOI: 10.1088/0957-4484/16/9/018
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Recombination dynamics of luminescence in colloidal CdSe/ZnS quantum dots

Abstract: Recombination dynamics of photoluminescence (PL) in colloidal CdSe/ZnS quantum dots (QDs) were studied using time-resolved PL measurements. The PL intensity shows a biexponential decay at 9 K, consisting of a fast component (∼1 ns) and a slow component (∼6.3 ns). Based on the emission-energy and temperature dependence of carrier lifetimes, we suggest that the fast and slow PL decay of colloidal CdSe/ZnS QDs originates from recombination of the delocalized carriers in the internal core states and the localized … Show more

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Cited by 60 publications
(59 citation statements)
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“…[38] Recombination via radiative traps will result in lingering luminescence. [48] Because the QDs are perfectly crystallized, as shown in Figures 4 and 5, the localized states are mainly on the QD surfaces. [37] It has been suggested that the energy levels of the radiative surface traps at CdSe QDs are near the band edge.…”
mentioning
confidence: 98%
“…[38] Recombination via radiative traps will result in lingering luminescence. [48] Because the QDs are perfectly crystallized, as shown in Figures 4 and 5, the localized states are mainly on the QD surfaces. [37] It has been suggested that the energy levels of the radiative surface traps at CdSe QDs are near the band edge.…”
mentioning
confidence: 98%
“…Nonetheless, there are 2 major advantages of using PL to examine trap states: (i) the well documented (5-12) sensitivity of NC PL to interface and environmental changes and (ii) the ability of time-resolved PL measurements to resolve processes that occur over a large dynamic range of timescales. Several groups (11,(31)(32)(33)(34)(35)(36)(37) have studied the influence of trap states on PL transients in CdSe NCs, and stochastic models have been used in some of these studies to extract radiative decay rates or trapping rates. Although such models successfully reproduce exciton-only dynamics, they have been unable to capture satisfactorily the influence of interface states.…”
mentioning
confidence: 99%
“…Again, the following discussion is based on the properties of CdSe and CdTe nanocrystals. Several relaxation processes have been proposed to explain the photophysics of CdSe QDs, including the thermally activated exciton transition from dark to bright states (Crooker et al, 2003) and carriers surface localization in trap states (Lee et al, 2005). Moreover, it has been shown that at room temperature the main non radiative process in CdSe/ZnS core/shell QDs is thermal escape, assisted by multiple longitudinal optical (LO) phonons absorption (Valerini et al, 2005), while at low temperature evidence for carrier trapping at surface defects was found.…”
Section: Excitation and Relaxation Processes In Colloidal Nanocrystalsmentioning
confidence: 99%
“…Despite these results, the role and the chemical origin (Wang et al, 2003b) of the surface defect states in the radiative and non radiative relaxation in nanocrystals has not been clarified completely. The existence of surface states due to unpassivated dangling bonds has been invoked to explain anomalous red-shifted emission bands in colloidal nanocrystals (Lee et al, 2005). On the contrary, it has been shown that above-gap trap states (Bawendi et al, 1992) affect the ultrafast relaxation dynamics (Cretì et al, 2005) and the single nanoparticle PL spectra of CdSe quantum rods (Rothenberg et al, 2005) due to charge trapping and local electric field fluctuations.…”
Section: Excitation and Relaxation Processes In Colloidal Nanocrystalsmentioning
confidence: 99%