Recombination dynamics in InGaN quantum wells

Jeon, ES; Kozlov, V. G.; Song, YK; Vertikov, A.; Kuball, M.; Nurmikko, A. V.; Liu, H; Chen, C; Kern, R. S.; Kuo, CP; Craford, M. G.

doi:10.1063/1.116983

Cited by 115 publications

(66 citation statements)

References 3 publications

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“…Indeed, some InGaN MQW LDs showed EHP lasing in tail states. 25,26,[32][33][34]62 This may cause the increase of threshold current density of InGaN LDs in terms of reduiction in differential gain. Importance of QW exciton localization into the energy tail states was explained in addition to highfield effects in InGaN QWs.…”

Section: Coulomb Screening Effects By Si-doping Of Gan Barriersmentioning

confidence: 99%

“…Several groups have assigned the spontaneous emission from InGaN QWs to the recombination of excitons localized at certain potential minima. 1,[25][26][27] On the other hand, several groups have discussed the importance of the quantum confined Stark effect (QCSE) 28 due to the piezoelectric field (F PZ ) in strained wurtzite InGaN QWs. 2,25,[29][30][31] In particular, the blueshift of the electroluminescence (EL) peak in InGaN SQW LEDs 1 with increasing drive current has been explained 1,25 by the combined effects of a reduction of QCSE due to Coulomb screening of F PZ 2,25,29 and band-filling of the energy tail states.…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopic Studies in InGaN Quantum Wells

Chichibu

Sota

Wada

et al. 1999

MRS Internet j. nitride semicond. res.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4S1, G2.7(1999). AbstractFundamental electronic modulations in strained wurtzite III-nitride, in particular In x Ga 1-x N, quantum wells (QWs) were treated to explore the reason why practical InGaN devices emit bright luminescences in spite of the large threading dislocation (TD) density. The emission mechanisms were shown to vary depending on the well thickness L and InN molar fraction x. The electric field across the QW plane, F, which is a sum of the fields due to spontaneous and piezoelectric polarization and the pn junction field, causes the redshift of the ground state resonance energy through the quantum confined Stark effect (QCSE). The absorption spectrum is modulated by QCSE, quantum-confined Franz-Keldysh effect (QCFK), and Franz-Keldysh (FK) effect from the barrires when, for the first approximation, potential drop across the well (F L) exceeds the valence band discontinuity, E V . Under large F L, holes are confined in the triangular potential well formed at one side of the well. This produces apparent Stokes-like shift in addition to the in-plane net Stokes shift on the absorption spectrum. The QCFK and FK further modulate the electronic structure of the wells with L greater than the three dimensional (3D) free exciton (FE) Bohr radius, a B . When F L exceeds E C , both electron (e) and hole (h) confined levels drop into the triangular potential wells at opposite sides of the wells, which reduces the wavefunction overlap. Doping of Si in the barriers partially screens the F resulting in a smaller Stokes-like shift, shorter recombination decay time, and higher emission efficiency. Finally, the use of InGaN was found to overcome the field-induced oscillator strength lowering due to the spontaneous and piezoelectric polarization. Effective in-plane localization of the QW excitons (confined excitons, or quantized excitons) in quantum disk (Q-disk) size potential minima, which are produced by nonrandom alloy potential fluctuation enhanced by the large bowing parameter and F, produces confined e-h pairs whose wavefunctions are still overlapped when L

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Section: Coulomb Screening Effects By Si-doping Of Gan Barriersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Spectroscopic Studies in InGaN Quantum Wells

Chichibu

Sota

Wada

et al. 1999

MRS Internet j. nitride semicond. res.

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“…Specifically, although a great deal of progress has been made in the development of InGaN-based light emitters, the role played by indium (In) in contributing to the optical efficiency is still quite controversial. A number of groups have proposed that the inhomogeneity of In incorporation results in carrier localization at In-rich regions and that this localization leads to enhanced optical efficiency [73][74][75]. Support of this hypothesis is found in cathodoluminescence experiments that demonstrate a variation of the PL emission energy on the microscale, suggesting that In composition variations on the order of several percent are possible [76].…”

Section: Study Of In-containing Uv Led Alloy Materialsmentioning

confidence: 53%

High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications

Baca¹,

Briggs²,

Allerman³

et al. 2001

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“…In order to optimize the device design, it is necessary to study and understand the physical properties of nitride MQWs as well as the MQW structural effects on the device performance. Recent work on the III-nitride alloy systems and MQWs has shown that localized excitons dominate the optical transitions in these systems at low temperatures [2][3][4]. And, it has been proposed and shown that piezoelectric fields due to lattice mismatch-induced strain in InGaN/GaN MQWs [5,6] and GaN/AlGaN QWs [6][7][8][9] are the primary reason for the large redshift of the photoluminescence (PL) emission peak.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

Kim

Lin

Jiang

et al. 1999

MRS Internet j. nitride semicond. res.

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Piezoelectric effects in GaN/AlGaN multiple quantum wells (MQWs) have been directly probed by picosecond time-resolved photoluminescence (PL) spectroscopy. The time-resolved PL spectra of the 40 Å well MQWs reveal that the PL transition peak position is in fact blueshifted at early delay times due to the collective effects of quantum confinement of carriers, piezoelectric field, and Coulomb screening. However, the spectral peak position shifts toward lower energies as the delay time increases and becomes redshifted at longer delay times. By comparing experimental and calculation results, we have obtained a low limit of the piezoelectric field strength to be about 560 kV/cm in the 40 Å well GaN/Al 0.15 Ga 0.85 N MQWs.

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Recombination dynamics in InGaN quantum wells

Abstract: Radiative recombination lifetime measurements of InGaN single quantum well

Cited by 115 publications

References 3 publications

Spectroscopic Studies in InGaN Quantum Wells

Spectroscopic Studies in InGaN Quantum Wells

High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications

Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

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