Recombination at semiconductor surfaces and interfaces

Aspnes, D. E.

doi:10.1016/0039-6028(83)90550-2

Cited by 261 publications

(117 citation statements)

References 48 publications

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“…2). This value is in a good agreement with the data published previously for n-GaAs(100) with similar doping level [24][25][26]. For the n-GaAs(100) surfaces treated with aqueous ((NH 4 ) 2 S + H 2 O) and alcoholic ((NH 4 ) 2 S + 2-C 3 H 7 OH) sulfide solutions the surface recombination velocity decreases to S = 1.25 × 10 5 cm/s and S = 6 × 10 4 cm/s, respectively (Fig.…”

Section: Resultssupporting

confidence: 93%

Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(1 0 0)

Lebedev

Ikeda

Noguchi

et al. 2013

Applied Surface Science

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(M.V. Lebedev). AbstractThe ultrafast carrier dynamics of GaAs(100) surfaces passivated with different sulfide solutions is studied by time-resolved measurements of infrared absorption using the femtosecond visible-pump infrared-probe technique. After passivation of n-GaAs (100) surface with the solution of ammonium sulfide in 2-propanol the three-fold decrease of the surface recombination velocity is observed. The treatment of the n-GaAs(100) surface with the aqueous sulfide solution has a smaller impact on the surface recombination velocity. The different effect of aqueous and alcoholic sulfide solutions on the efficiency of surface passivation is caused by the different mechanisms of charge transfer at the semiconductor/solution interfaces.

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Section: Resultssupporting

confidence: 93%

Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(1 0 0)

Lebedev

Ikeda

Noguchi

et al. 2013

Applied Surface Science

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“…It is well recognized that defect levels near mid-gap are the most effective nonradiative recombination centers, because they have a high probability of capturing both electrons and holes [10][11][12]. Therefore, the rapid irradiation-induced quenching of the PL intensity in GaAs, Ga 0.5 In 0.5 P, and Ga-rich In x Ga 1-x N can be attributed to the nonradiative recombination centers formed inside the bandgap by irradiation damage.…”

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confidence: 99%

Photoluminescence of energetic particle-irradiated InxGa1−xN alloys

Jones

Häller

et al. 2006

Applied Physics Letters

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Abstract:A study of the photoluminescence (PL) characteristics of In x Ga 1-x N alloys in which the Fermi level is controlled by energetic particle irradiation is reported. In In-rich In x Ga 1-x N the intensity of the PL emission initially increases with irradiation dose before falling rapidly at high doses. This unusual trend is attributed to the location of the average energy of the dangling-bond type native defects (the Fermi level stabilization energy, or E FS ), which lies about 0.9 eV above the conduction band edge of InN. As a result of this atypically high position of E FS , irradiation-induced defects formed at low doses are donors, and do not act as efficient recombination centers. Thus, low dose irradiation increases the electron concentration and leads to an increase of the photoluminescence intensity. However, at higher irradiation doses, the Fermi level approaches E FS , and the defects formed become increasingly effective as a non-radiative recombination centers and the PL quenches quickly. Our calculations of the PL intensity based on the effect of the electron concentration and the minority carrier lifetime, show good agreement with the experimental data. Finally, the blue shift of PL signal with increasing electron concentration is explained by the breakdown of momentum conservation due to the irradiation damage.

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“…The results are analyzed using a new model which incorporates photovoltage, 10 surface recombination 18 and the energy dependence of the density of surface states 19 together with the bias dependence of the tunnel barrier height. 20 For a gold (non-magnetic) surface, the interpretation of the results is relatively simple as the density of empty states depends only weakly on energy.…”

Section: Introductionmentioning

confidence: 99%

Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces

Arscott

Peytavit

et al. 2010

Phys. Rev. B

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Abstract.The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied bias, tunnel distance and excitation light power. The results are compared with the predictions of a model which includes the bias dependence of the tunnel barrier height and the bias-induced decrease of surface recombination velocity. It is found that i) the tunnel photocurrent from the conduction band dominates that from surface states. ii) At large tunnel distance the exponential bias dependence of the current is explained by that of the tunnel barrier height, while at small distance the change of surface recombination velocity is dominant.

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Recombination at semiconductor surfaces and interfaces

Cited by 261 publications

References 48 publications

Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(1 0 0)

Effect of surface treatment with different sulfide solutions on the ultrafast dynamics of photogenerated carriers in GaAs(1 0 0)

Photoluminescence of energetic particle-irradiated InxGa1−xN alloys

Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces

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