Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress

Estimations of Low Temperature Dislocation Mobility in GaN

“…Although CL experiments do not allow to determine directly the acting slip system, the most of transmission electron microscopy investigations led to conclusion that the dislocations glide in the {1 01} and {11 2} pyramidal planes . Dislocation glide in the basal plane was also revealed in the previous investigations, however, as seen in Figure , the basal dislocation loops are not revealed in the studied films due probably to rather high density of threading dislocations, which can pin the basal dislocation propagation …”

“…On the load‐penetration curves measured at room temperature, the pop‐in events were revealed practically in all measurements and they were explained by the plastic deformation under the indentation. The dislocations introduced by indentation at room temperature were directly revealed by chemical etching, cathodoluminescence (CL), and electron beam induced current (EBIC) methods …”

“…The dislocations introduced by indentation at room temperature were directly revealed by chemical etching, [2] cathodoluminescence (CL), and electron beam induced current (EBIC) methods. [1,[3][4][5][7][8][9][10] Thus, there is no doubt that dislocations in GaN are mobile at room temperature. An ability of dislocations to move at low temperatures implies the low activation energy for the dislocation mobility.…”

Effects in the Optical and Structural Properties Caused by Mg or Zn Doping of GaN Films Grown via Radio-Frequency Magnetron Sputtering Using Laboratory-Prepared Targets

“…Recently, the GaN has also been used in applications for nuclear radiation detectors, biosensors, and nuclear batteries with high energy density/long lifetime, as well as smallscaled fabrication of pacemakers. In this way, GaN is helping to save lives [4][5][6][7][8][9].…”

Hexagonal Nanocrystals into AlGaN Powders Obtained via Pyrolysis from an Organometallic Compound

“…This because to its application in the conservation of electrical energy through the replacement of incandescent light bulbs with LED technology bulbs [3]. Other important applications of the III-Nitrides are found in solar cells, LED screen, high electron mobility transistors (HEMTs), microwave devices and laser diodes [4]- [7]. In the III-Nitrides semiconductors stand out the ternary alloys AlGaN and InGaN due to their band gaps in a range from 3.4 to 6.2 eV.…”