Recombination and Charge Collection at Nickel Silicide Precipitates in Silicon Studied by Electron Beam‐Induced Current

Abstract

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Nucleation of Nickel Disilicide Precipitates in Float‐Zone Silicon: The Role of Vacancies

“…[ 9 ] Recently, electron beam induced current (EBIC) was used to study recombination and charge collection at individual platelets implying similar properties of atomically thin NiSi 2 compared to the bulk material. [ 10 ]…”

“…[9] Recently, electron beam induced current (EBIC) was used to study recombination and charge collection at individual platelets implying similar properties of atomically thin NiSi 2 compared to the bulk material. [10] Besides impurities, properties of high purity crystalline silicon are rather sensitive to intrinsic point defects incorporated in the material during the crystallization process. [11] Under typical float zone growth conditions for most technological purposes, vacancies prevail and supersaturate in the crystal during cooling.…”