Abstract:An ion-beam mixing technique is used to fabricate ultrashallow p ϩ /n junctions. In this method, a thin boron layer is first sputter deposited onto the Si wafer surface. Then a 10-40 keV Ge ion beam or Ϫ3 kV Ar plasma source ion implantation ͑PSII͒ is used to knock the boron atoms into the Si substrate by means of ion-beam mixing. For the thin ͑0.7 nm͒ boron layers used in this effort, a selective etch for the removal of boron is unnecessary. Sub-100 nm p ϩ /n junctions have been realized with this method. Num… Show more
The sections in this article are
Comparison of
PSII
with Beamline Implantation
Physics of
PSII
Plasma
Applications
Other Materials and Plasma Systems
Commercialization Issues
The sections in this article are
Comparison of
PSII
with Beamline Implantation
Physics of
PSII
Plasma
Applications
Other Materials and Plasma Systems
Commercialization Issues
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