Recessed Channel Fin Field-Effect Transistor Cell Technology for Future-Generation Dynamic Random Access Memories

Abstract

Electronic states for two possible high-pressure phases (with the ThSi 2 structure and with the AlB 2 structure) of CaSi 2 are determined by means of a local density approximation band-structure calculation. We confirm that these polymorphs can be regarded as doped sp 2 networks of Si. However, a simple picture in terms of π-orbitals is not adequate for explaining the conduction bands, because (i) an s-like band, which is anti-bonding in sp 2 connections but bonding between segments of the network, appears and (ii) there is π -d hybridization between Si and Ca.

Gate induced drain leakage reduction with analysis of gate fringing field effect on high-κ/metal gate CMOS technology

“…[17][18][19] The control of GIDL has an advantage at low standby power, 20) thus many research works have focused on the suppression of GIDL currents on diverse MOSFET structures like silicon on insulator, double gate, bulk, and nanowire. [21][22][23][24][25][26][27] In Sect. 2, the schematics of parameters and models about the simulated device are described.…”

Comparative Study of Multigate and Multifin Metal–Oxide–Semiconductor Field-Effect Transistor

“…1) Therefore, diverse approaches to enhancing device performance have been proposed, such as the use of strain silicon, 2) high-/metal gate materials, 3) and MOSFETs with vertical channels. [4][5][6][7][8] Among these promising approaches, vertical channels have attracted much attention because of their many interesting characteristics. [9][10][11][12] Various studies of devices with multigate structures have been published.…”