In conventional p‐i‐n inverted perovskite solar cells (PSCs), there exists considerable energy loss due to both unsatisfactory light path design and trap‐induced interfacial defects. The sunlight is absorbed competitively by conductive oxide substrates and HTM in front of the perovskite layer, while the opaque metal back electrode also prevents light penetration. Worse yet, there is severe non‐radiative charge recombination caused by defects between the perovskite layer and the ETM. To tackle the above two issues, we synthesize a new green‐emitting material ((CH3)4N)2(C2H5)4N·MnBr4 and introduce it in/on the perovskite layer to achieve both defect passivation and light complementation. The green luminescence of this single crystal at the interface is found to provide secondary light absorption, as evidenced by a remarkable promotion of short‐circuit current density. It is also found that the excess PbI2 on the surface of perovskite can be effectively removed, and as the interfacial additive, ((CH3)4N)2(C2H5)4N·MnBr4 inhibits trap‐assisted recombination losses, which provides favorable energy level alignment and extends charge carrier lifetime. As a result, the champion PCE (21.23%) of the target‐treated ((CH3)4N)2(C2H5)4N·MnBr4 device exceeds that 19.5% of the pristine‐without ((CH3)4N)2(C2H5)4N·MnBr4 device. This work provides an effective interfacial strategy for high‐performance and stable inverted perovskite solar cells.This article is protected by copyright. All rights reserved.