1963
DOI: 10.1109/proc.1963.2259
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Cited by 58 publications
(8 citation statements)
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“…The data sets for CdTe polycrystalline and single crystalline materials agree well with each other except for the data of Loferski [35]. As the absorption coefficient a for CdTe is higher than 10 6 m À 1 above the absorption edge, most of the incident light will be absorbed within 1 mm depth or less.…”
Section: Electrical and Optical Conditions In Cdte Solar Cellssupporting
confidence: 70%
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“…The data sets for CdTe polycrystalline and single crystalline materials agree well with each other except for the data of Loferski [35]. As the absorption coefficient a for CdTe is higher than 10 6 m À 1 above the absorption edge, most of the incident light will be absorbed within 1 mm depth or less.…”
Section: Electrical and Optical Conditions In Cdte Solar Cellssupporting
confidence: 70%
“…2, the spectral absorption coefficients for CdS and CdTe measured in this work (solid curves) are compared to the literature data (symbols) for single crystalline (closed symbols) and polycrystalline (open symbols) materials [33][34][35]12,36].…”
Section: Electrical and Optical Conditions In Cdte Solar Cellsmentioning
confidence: 99%
“…It was necessary to wait 10 years in order to develop epitaxial growth techniques that were able to produce a small solar cell showing an efficiency of 13% [18], which is quite low compared to the theoretical efficiency of 26% [19]. It was already known [20] that the direct recombination process, occurring in poor-quality GaAs crystals, limits the cell output. Moreover, it was shown that a high surface recombination velocity was the most probable origin of the poor performance practically obtained for GaAs cells [21].…”
Section: Gallium Arsenide (Gaas)mentioning
confidence: 99%
“…11. A calculated curve of the maximm efficiency that can be obtained as a function of the enersy gap of the semiconductor made into a p-n ~unction and illumimated with the solar spectrum outside the atmosphere, AMO (Loferski, 1963). N h represents the number of photons in AMl whose energies are greater than the bandgRp of silicon, E .…”
Section: Energy Gap (Ev)mentioning
confidence: 99%