Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM)

Figure 4. CBRAM-based artificial synapses. a) A conceptual schematic of Ag-SiGe-Si CBRAM during switching. Reproduced with permission. [107] Copyright 2018, Springer Nature. b) Resistive switching characteristics of Ag/CrPS 4 /Au CBRAM. The inset is the schematic diagram of the device. c) The experiment data of LRS retention and the fitting curve of the result with exponential decay function. Reproduced under the terms of the Creative Commons Attribution 4.

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Recent progresses in spin transfer torque-based magnetoresistive random access memory (STT-MRAM)

Abstract: An overview of resistive random access memory devices Chinese Science Bulletin 56, 3072 (2011); Micromagnetic modeling of magnetization dynamics driven by spin-transfer torque in magnetic nanostructures

Cited by 13 publications

References 89 publications

Neuromorphic Engineering for Hardware Computational Acceleration and Biomimetic Perception Motion Integration

Neuromorphic Engineering for Hardware Computational Acceleration and Biomimetic Perception Motion Integration

Femtosecond laser-assisted switching in perpendicular magnetic tunnel junctions with double-interface free layer

Neuromorphic terahertz imaging based on carbon nanotube circuits

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