Recent progress of high-quality GaN substrates by HVPE method

Fujikura, Hajime; Yoshida, Takehiro; Shibata, Masatomo; Otoki, Yohei

doi:10.1117/12.2257202

Cited by 35 publications

(30 citation statements)

References 15 publications

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“…Some of the results have previously been reported in the proceedings of a conference. 20) Here, more-detailed results and a comprehensive discussion are presented. First, we explain the basic performance of our standard HVPE system that permits the growth of GaN layers with devicequality smooth as-grown surfaces and excellent thickness uniformity.…”

Section: Introductionmentioning

confidence: 99%

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm−3, with a maximum mobility of 1150 cm2·V−1·s−1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm−3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

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Section: Introductionmentioning

confidence: 99%

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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“…have lower dislocation densities but are currently costlier than the GaN templates [16][17][18][19][20][21]. Currently GaN templates on Sapphire and on SiC substrates generally have a dislocation density around ~ 10 8 cm −2 .…”

Section: Invited Papermentioning

confidence: 99%

“…The dislocation density of GaN templates on Si is even higher at ~ 10 9 cm −2 , though larger size substrates are available [16][17][18][19]. Compared to the GaN templates, the dislocation densities of state of the art bulk substrates like hydride vapor phase epitaxy (HVPE) and ammonothermal GaN are much lower, at ~ 5 × 10 5 cm −2 and ~ 5 × 10 4 cm −2 , respectively [20,21]. Overall HVPE wafers are considered as a good intermediate or compromise between large size substrates such as GaN templates on sapphire or on Si substrates but with high dislocation densities and more expensive ammonothermal bulk GaN substrates with a low dislocation.…”

Section: Invited Papermentioning

confidence: 99%

“…While the SiC based power device technology for low to mid voltage range applications is getting mature and in production, currently the focus of interests is on the development of GaN power devices for low-mid voltage range applications. Even though theoretically GaN has better intrinsic material properties than SiC, the availability of good quality GaN bulk substrate is still a big challenge [16][17][18][19][20][21]. To achieve high-power diodes with high reverse blocking voltage, large area substrates with low dislocation densities are needed.…”

Section: Introductionmentioning

confidence: 99%

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Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate

Talesara

Zhang

Chen

et al. 2021

Journal of Materials Research

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We report the design and development of vertical 1.5 kV GaN p-n diodes that consists of an 8 μm drift layer and a thin p-GaN/p + -GaN layer grown by metal-organic chemical vapor deposition (MOCVD) on a hydride vapor phase epitaxy (HVPE) synthesized GaN substrate. The drift layer has a low doping concentration of ∼9 × 10 15 cm −3 and electron mobility ~ 1200 cm 2 /Vs at room temperature. The fabricated devices with an optimized guard ring design as edge termination exhibit a breakdown voltage of > 1.5 kV with specific on-resistance of ~ 1.5 mΩ cm 2 . The breakdown efficiency of these diodes is over 72% when compared to ideal analytical calculations and over 90% with respect to numerical simulations. Temperature-dependent measurements show that the devices have a positive temperature coefficient suggesting the avalanche breakdown mechanism. These results suggest that these MOCVD grown vertical GaN-on-GaN (HVPE) p-n diodes are promising for low-mid range voltage power switching applications.

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“…На сьогоднішній день відомі приклади виробництва об'ємних кристалів GaN з малим числом структурних дефектів [1]. Однак, через труднощі виробництва і малу поширеність технології їх вартість висока.…”

Section: вступunclassified

Finite element analysis of electroresistive heating of a high pressure apparatus for studying the solubility of GaN in Fe

Liudvichenko¹,

Anisin²,

Lyeshchuk³

et al. 2021

Mech. Adv. Technol.

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The advantages and disadvantages of methods for gallium nitride crystals production are considered. The convergence of the solution of the problem of electroresistive heating at determination of a thermal condition of the high pressure apparatus cell is investigated. The thermal state of the high pressure apparatus cell used to determine the solubility of gallium nitride in iron has been modeled and investigated. It is determined that the combined discretization with the use of triangular and quadrangular elements allows to reduce the time of solving the coupled problem of electrical and thermal conductivity under these conditions. The results of calculations are presented by steady temperature fields in various elements of the device. It was obtained that at the temperature in the cell control point of 1800 °С its axial difference in the volume of the investigated sample of iron was 62 °С , the maximum difference was 156 °С. The simulated cell configuration and the heating conditions defined for it are acceptable for experimental studies of the solubility of GaN in contact with Fe under conditions of high pressures and temperatures.

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Recent progress of high-quality GaN substrates by HVPE method

Cited by 35 publications

References 15 publications

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate

Finite element analysis of electroresistive heating of a high pressure apparatus for studying the solubility of GaN in Fe

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