Recent progress in processing and properties of ZnO

Pearton, S. J.; Norton, D. P.; Ip, K.; Heo, Young‐Woo; Steiner, T.

doi:10.1016/s0749-6036(03)00093-4

Cited by 548 publications

(420 citation statements)

References 129 publications

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“…ZnO is one of the most promising material for many applications due to its wide band gap (3.27 eV) and large exciton binding energy of 60 meV, which is twice larger than that of GaN (28 meV) 1 . By virtue of its extra-ordinary properties, ZnO finds its applications in the fields of optoelectronics 2 , spintronics [3][4] , electro-luminescence displays 5 and gas sensors 6 . Recently, Al doped ZnO films are showing great promise as the alternative material to costlier Indium Tin Oxide (ITO), due to its low cost, non-toxicity and abundant availability compared to ITO films.…”

Section: Introductionmentioning

confidence: 99%

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Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Srinatha

Kamble³

et al. 2016

RSC Adv.

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The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with raising RF power. Besides, the increasing RF power is found to improve the crystallinity and grains growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of Al 3+ ion found to increase with increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 °C. The AZO film shows good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

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Section: Introductionmentioning

confidence: 99%

“…There are many reports on NO 2 gas sensors such as, SnO 2 13 , NiO 14 , ZnO [15][16][17] based sensors. Among all the existing metal oxide gas sensors, ZnO based sensors are attracting wide attention when it is doped with Al due to the high sensitivity towards NO 2 and selectivity among other gases 9,15,18,23 .…”

Section: Introductionmentioning

confidence: 99%

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Srinatha

Kamble³

et al. 2016

RSC Adv.

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“…The electrical properties of ZnO thin films were effectively controlled by in situ nitrogen doping using NH 4 OH as a source for reactants. Especially, the electron concentration in ZnO was lowered to below 10 15 cm −3 .…”

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confidence: 99%

“…1,3 Zinc oxide ͑ZnO͒ is considered as an attractive candidate since it can be deposited even at room temperature with good electrical and optical properties. 4 For practical applications of ZnO TFTs, the off current ͑I off ͒ has to be low enough ͑Ͻ10 −11 A͒ since the high I off results in poor on/off ratio leading to problems in switching modulation. Moreover, the carrier mobility has to be large enough to provide stable operation of large-area displays at required video rate.…”

mentioning

confidence: 99%

High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

Lim

Kwon

Kim³

et al. 2007

Applied Physics Letters

174

137

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“…Such a behavior has been attributed to a high concentration of donor type defects. Hydrogen atoms located in the interstitial positions [18,19], zinc interstitials [20] and oxygen vacancies are claimed to be the most important shallow donors in ZnO. These defects are hampering p-type doping in ZnO [21].…”

Section: Resultsmentioning

confidence: 99%

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

et al. 2011

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The ZnO-based Schottky diodes revealing a high recti cation ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high recti cation ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The in uence of these approaches on the diode's recti cation ratio together with modeling based on the di erential approach and thermionic emission theory are presented.

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Recent progress in processing and properties of ZnO

Cited by 548 publications

References 129 publications

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

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