Recent Progress in Algorithms for Semiconductor Device Simulation

Bank, Randolph E.; Burgler, J.; Coughran, W.M.; Fichtner, W.

doi:10.1007/978-3-0348-5698-0_10

Cited by 6 publications

(5 citation statements)

References 25 publications

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“…( 5)). But The Gummel iteration (Gummel, 1964;Scharfetter & Gummel, 1969) was discovered decades ago by the semiconductor community (Bank et al, 1990;Bank, Rose & Fichtner, 1983;Hess, 1991;Hess, Leburton & Ravaioli, 1991;Jerome, 1995;Kerkhoven, 1988;Kerkhoven & Jerome, 1990;Kerkhoven & Saad, 1992;Lundstrom, 1992) and was discovered in my lab independently by Duan Chen, some years later (e.g., Chen & Eisenberg, 1993a). The iteration is a general method for producing a selfconsistent solution of coupled equations closely related to the self-consistent field methods used in quantum mechanics to compute orbitals.…”

mentioning

confidence: 99%

From Structure to Function in Open Ionic Channels

Eisenberg

1999

Journal of Membrane Biology

158

131

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We consider a simple working hypothesis that all permeation properties of open ionic channels can be predicted by understanding electrodiffusion in fixed structures, without invoking conformation changes, or changes in chemical bonds. We know, of course, that ions can bind to specific protein structures, and that this binding is not easily described by the traditional electrostatic equations of physics textbooks, that describe average electric fields, the so-called `mean field'. The question is which specific properties can be explained just by mean field electrostatics and which cannot. I believe the best way to uncover the specific chemical properties of channels is to invoke them as little as possible, seeking to explain with mean field electrostatics first. Then, when phenomena appear that cannot be described that way, by the mean field alone, we turn to chemically specific explanations, seeking the appropriate tools (of electrochemistry, Langevin, or molecular dynamics, for example) to understand them. In this spirit, we turn now to the structure of open ionic channels, apply the laws of electrodiffusion to them, and see how many of their properties we can predict just that way.Comment: Nearly final version of publicatio

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confidence: 99%

From Structure to Function in Open Ionic Channels

Eisenberg

1999

Journal of Membrane Biology

158

131

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“…To simplify things, let us discuss the ABF method assuming that (2) is being solved by the coupled (Newton) approach with a block Gauss-Seidel iteration being used for (12)• Hence, we are interested in solving a linear system of algebraic equations D-1 is the ABF postconditioner. We then solve (19) by block Gauss-Seidel (or block SSOR) iteration; the diagonal block system arising in the Gauss-Seidel iteration can be solved via sparse direct or preconditioned iterative methods [3,2].…”

Section: The Abf Methodmentioning

confidence: 99%

“…The work ofT. F. Chan If there are v degrees of freedom associated with the underlying discrete approximation to each PDE, then (2) represents m y nonlinear algebraic equations to be solved.…”

Section: Z)\ \ L ( Z L Zz Zm) /mentioning

confidence: 99%

The alternate-block-factorization procedure for systems of partial differential equations

Bank

Chan

Coughran

et al. 1989

BIT

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Abstract.The alternate-block-factorization (ABF) method is a procedure for partially decoupling systems of elliptic partial differential equations by means of a carefully chosen change of variables. By decoupling we mean that the ABF strategy attempts to reduce intra-equation coupling in the system rather than intra-grid coupling for a single elliptic equation in the system. This has the effect of speeding convergence of commonly used iteration schemes, which use the solution of a sequence of linear elliptic PDEs as their main computational step. Algebraically, the change of variables is equivalent to a postconditioning of the original system. The results of using ABe: postconditioning on some problems arising from semiconductor device simulation are discussed.

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“…) can be obtained, the component of the current integration Equation ( 11) can be rewritten as In the present implementation, a 1-D discretization grid is adopted for the physical model of the semiconductor device, which is fully independent of the 3-D-FDTD mesh. For the physical model, space-domain integration of the semiconductor device current equations relies on the well-known Scharfetter-Gummel scheme [21], whereas a backward-Euler algorithm [22] is adopted to accomplish time-domain integration. Based on the assumption of a quasi-stationary approximation holding for active devices; i.e., the size of device active regions is assumed to be negligible, with respect to the minimum signal wave-length, the device can therefore be regarded, when solving Maxwell's equations, as a "lumped" (i.e., zero-dimensional) element, while the dielectric constant in the device region is assumed to be that of air, and thus Maxwell's equations, including a semiconductor device, in integral form, can be described as:…”

Section: Electromagnetic-physics-based Simulationmentioning

confidence: 99%

Analysis of a p-i-n Diode Circuit at Radio Frequency Using an Electromagnetic-Physics-Based Simulation Method

Chen

2023

Electronics

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Embracing the era of higher operating frequencies, expanding functionality, and increased integration scale, modern circuit design relies more and more on the accurate prediction of the electromagnetic (EM) effects resulting from undesired radiation and mutual coupling of digital electronic devices. In this paper, an electromagnetic-physics-based simulation method is proposed, to simulate semiconductor devices and circuits. It utilizes physics-based simulation to analyze semiconductor devices in a circuit and incorporates this physics-based simulation into electromagnetic simulation (e.g., the finite difference time domain (FDTD)), to simulate a circuit at high frequency. To validate the proposed method, sample numerical results on circuits containing a commercial p-i-n diode with model number mot_bal99lt1 at radio frequency (RF) were obtained and compared with measurement data. The comparison showed a good agreement between the two sets of data, which validated the feasibility and accuracy of the proposed algorithm. Moreover, the proposed method can provide a useful physical mechanism for understanding effects on semiconductor devices and circuits.

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Recent Progress in Algorithms for Semiconductor Device Simulation

Cited by 6 publications

References 25 publications

From Structure to Function in Open Ionic Channels

From Structure to Function in Open Ionic Channels

The alternate-block-factorization procedure for systems of partial differential equations

Analysis of a p-i-n Diode Circuit at Radio Frequency Using an Electromagnetic-Physics-Based Simulation Method

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