Recent improvements in amorphous silicon-based multijunction modules

Arya, R.R.; Bennett, M.; Yang, Linlin; Newton, J.; Li, Y. M.; Maley, N.; Fieselmann, B.; Chen, L. F.; Rajan, K.; Wilczynski, A.; Wood, G.

doi:10.1063/1.45750

Cited by 2 publications

(1 citation statement)

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“…Amorphous silicon solar cell technology has a potential to be a cost effective alternative to conventional electricity generation [1]. The drawbacks, low efficiency and light induced degradation of a-Si solar cells, have been partially overcome by fabricating multijunction a-Si solar cells [1,2]. To enhance the efficiency of a multijunction a-Si solar cell, a low band gap material is essential for the intrinsic layer at the bottom cell.…”

Section: Introductionmentioning

confidence: 99%

Development of stabilized dual gap double junction a-Si solar cell using helium diluted a-Si : H intrinsic layer

Banerjee

Sarker

2002

J. Phys. D: Appl. Phys.

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Low gap (∼1.6 eV) a-Si : H films have been prepared by using helium diluted silane as source gas mixture in the usual radiofrequency plasma enhanced chemical vapour deposition method (13.56 MHz). The films have characteristics suitable for use as active layer of the bottom cell of a dual gap double junction a-Si solar cell. The films have been prepared at different rf-power densities and chamber pressures and characterized in detail. The role played by helium in improving the structure of a-Si : H and lowering of the band gap has been analysed. The cells fabricated with the said material show higher short circuit current density (Jsc = 8.9 mA cm−2) and lower light induced degradation (9–10%) before stabilization.

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Section: Introductionmentioning

confidence: 99%