Recent developments in rear-surface passivation at Fraunhofer ISE

Hofmann, M.; Janz, S.; Schmidt, Christian; Kambor, S.; Suwito, Dominik; Kohn, N.; Rentsch, J.; Preu, R.; Glunz, Stefan W.

doi:10.1016/j.solmat.2008.11.056

Cited by 59 publications

(34 citation statements)

References 17 publications

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“…10 In contrast, lowtemperature SiO x synthesized by plasma enhanced chemical vapor deposition ͑PECVD͒ in combination with a SiN x capping layer has not resulted in a comparable high level of passivation yet. For such PECVD SiO x / SiN x stacks, the lowest value ͑S ef f ϳ 40 cm/ s͒ was reported recently by Hofmann et al 9 for low resistivity p-type c-Si.…”

mentioning

confidence: 78%

Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

Dingemans

Mandoc

Bordihn

et al. 2011

Applied Physics Letters

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Very low surface recombination velocities <6 and <11 cm/s were obtained for SiOx/a-SiNx:H stacks synthesized by plasma-enhanced chemical vapor deposition on low resistivity n- and p-type c-Si, respectively. The stacks induced a constant effective lifetime under low illumination, comparable to Al2O3 on p-type Si. Compared to single layer a-SiNx:H, a lower positive fixed charge density was revealed by second-harmonic generation measurements, while field-effect passivation was absent for a reference stack comprising thermally grown SiO2. The results indicate that hydrogenation of interface states played a key role in the passivation and remained effective up to annealing temperatures >800 °C.

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confidence: 78%

Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

Dingemans

Mandoc

Bordihn

et al. 2011

Applied Physics Letters

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“…In Ref. [9] three different passivating configurations are used: a stack of PECVD amorphous silicon and silicon oxide layers, an amorphous silicon carbide film and a triple stack of silicon oxide and silicon nitride. In all three cases solar cells with efficiencies beyond 20% have been obtained.…”

Section: Introductionmentioning

confidence: 99%

Laser‐fired contact optimization in c‐Si solar cells

Ortega

Orpella

Martı́n

et al. 2011

Progress in Photovoltaics

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In this work we study the optimization of laser-fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c-Si and mc-Si solar cell fabrication: thermally grown silicon oxide (Si0 2 ), deposited phosphorus-doped amorphous silicon carbide (a-SiC/H(«)), aluminum oxide (A1 2 0 3 ) and silicon nitride (SiN^/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65-3 mil cm 2 have been obtained.

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“…To overcome bulk lifetime degradation, a low-temperature SiO x deposition by PECVD has been studied by different groups [33][34][35] for surface passivation. Another option for the synthesis of SiO x is a chemical oxidation of the Si surface using nitric acid (HNO 3 ).…”

Section: Sio Xmentioning

confidence: 99%

Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review

Balaji¹,

Hussain²,

Park³

et al. 2015

Transactions on Electrical and Electronic Materials

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To reduce the cost of solar electricity, the crystalline-silicon (c-Si) photovoltaic industry is moving toward the use of thinner wafers (100 μm to 200 μm) to achieve a high efficiency. In this field, it is imperative to achieve an effective passivation method to reduce the electronic losses at the c-Si interface. In this article, we review the most promising surface passivation schemes that are available for high-efficiency solar cells.

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Recent developments in rear-surface passivation at Fraunhofer ISE

Cited by 59 publications

References 17 publications

Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

Laser‐fired contact optimization in c‐Si solar cells

Surface Passivation Schemes for High-Efficiency c-Si Solar Cells - A Review

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