1970
DOI: 10.1109/tns.1970.4325676
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Recent Developments in GaP(Cs)-Dynode Photomultipliers

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Cited by 20 publications
(1 citation statement)
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“…-8 -Secondary emission yields of GaP(Cs) surfaces are considerably higher, typically between 30 and 50 at a primary electron energy of 600 eV, than those obtained with conventionil dynode materials, where average dynode gains of 5 to 8 can be achieved [19], [20], Due to the higher secondary emission yield, photomultiplier electron multipliers require a fewer numbers of dynode stages than conventional electron multipliers for the same gain.…”
Section: Electron Transit Time Spread Considerationsmentioning
confidence: 99%
“…-8 -Secondary emission yields of GaP(Cs) surfaces are considerably higher, typically between 30 and 50 at a primary electron energy of 600 eV, than those obtained with conventionil dynode materials, where average dynode gains of 5 to 8 can be achieved [19], [20], Due to the higher secondary emission yield, photomultiplier electron multipliers require a fewer numbers of dynode stages than conventional electron multipliers for the same gain.…”
Section: Electron Transit Time Spread Considerationsmentioning
confidence: 99%