Recent developments and applications of chemical mechanical polishing

Zhong, Zhang

doi:10.1007/s00170-020-05740-w

Cited by 30 publications

(8 citation statements)

References 123 publications

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“…Modern industry requires the perfect and reliable performance of products [1][2][3]. Chemical mechanical polishing is a technology to realize ultra-precision machining [4,5]. Abrasive plays a very important role in chemical mechanical polishing, and often were used in the processing of semiconductor materials, aerospace and other fields [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Research of dry tribochemical mechanical polishing SiC with an innovation abrasive-catalytic abrasive cluster

Wang

Ding²,

Wang³

et al. 2023

Preprint

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Abrasive particles have a crucial influence on the material removal rate and surface quality of the workpiece in tribochemical mechanical polishing. Therefore, this article selects a self-made catalytic abrasive cluster to polish the 6H-SiC and explore the removal mechanism of polishin silicon carbide in the new catalytic abrasive cluster. The tribochemical mechanical polishing test and friction and wear test of 6H-SiC were carried out with three different abrasives, and the evaluation parameters such as material removal rate, surface roughness and friction coefficient were obtained. Quanta 200 scanning electron microscope(SEM) and oxfobrdinca 250 energy dispersive spectrometer (EDS) and x-ray diffraction(XRD)diffractometer were used to observe the surface, analyze the elements and determine the composition of silicon carbide workpiece after tribochemical mechanical polishing. The experimental result shows that oxygen is produced in the tribochemical mechanical polishing of silicon carbide by catalytic abrasive cluster, which makes the silicon carbide surface generate SiO2 shear film that is easy to be removed. Comparing with iron-based white corundum mixed abrasive and Al2O3 abrasive, the catalytic abrasive cluster has better processability for 6H-SiC, and the material removal rate can reach to 42.928nm/min.

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Section: Introductionmentioning

confidence: 99%

Research of dry tribochemical mechanical polishing SiC with an innovation abrasive-catalytic abrasive cluster

Wang

Ding²,

Wang³

et al. 2023

Preprint

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“…Mechanochemical material removal experiments based on atomic force microscopy (AFM) have been used to simulate the singe asperity contact between polishing abrasive and wafer surface during the CMP process [21][22][23][24]. The mechanochemical removal process on GaAs surface is mainly attributed to the formation of a chemical bonding bridge between substrate and abrasive particles (e.g., GaAs− O− Si) with the help of water molecules at the reaction interface.…”

Section: Introductionmentioning

confidence: 99%

Effect of counter-surface chemical activity on mechanochemical removal of GaAs surface

Gao

Zhou

et al. 2022

Tribology International

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“…The studies by Li et al [16] showed that the surface of Y 3 Al 5 O 12 material was signi cantly improved when polishing by CMS containing a mixture of SiO 2 and NaOH suspensions, but the removal capacity of the workpiece residue was low 0.29 (nm/min). Besides, another factor affecting the use of colloidal silica is that the ability to remove the processing residue is reduced in the process of reusing colloidal silica to produce -Si-OH [17][18][19]. Several studies have been conducted to improve the performance of colloidal silica, however, the performance improvement is still limited [20].…”

Section: Introductionmentioning

confidence: 99%

A New Chemical-Mechanical Polishing Method Based On Colloids Silica and MgO Was Developed For Polishing Y3Al5O12 Material

Duc

Hieu

Quang

2022

Preprint

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The material yttrium aluminum oxide (Y3Al5O12) is one of the materials commonly used in laser devices. For application in optical devices, it is necessary to produce ultra-precise surface quality, however, Y3Al5O12 material belongs to the group of difficult-to-machine materials with high brittleness and hardness. Therefore, it is very difficult to ensure that the main criterion when finishing this material to produce a quality surface in the nanometer form with the ability to remove the material is very difficult. To solve this problem, this work provided a new chemical - mechanical polishing mixture. The proposed polishing mixture of ZrO2, Na2SiO3–5H2O, and MgO abrasives has a weight ratio of 8%, 5% and 1% respectively, with the remainder being deionized water. The surface result after polishing is obtained with a material removed rate of 38 (nm/min) along with an ultra-smooth surface produced with Ra = 0.41 nm. With the help of X-ray photoelectron spectroscopy (XPS) method before and after polishing by CMS, the reaction mechanisms were elucidated. Analytical results show that Y3Al5O12 material produces YOOH and AlOOH in Na2SiO3 solution, then combines with –Si–OH to form (Y-Si) and (Al-Si) with significantly reduced hardness compared to other Y3Al5O12 materials, these products combine with MgO to form montmorillonites (3MgO–Al2O3–3SiO2–3Y2O3–5Al2O3). With this formation, the surface layer of Y3Al5O12 material becomes soft and is easily removed by ZrO2 abrasive particles under the influence of mechanical polishing, resulting in superfine surfaces are generated from the proposed CMS model.

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Recent developments and applications of chemical mechanical polishing

Cited by 30 publications

References 123 publications

Research of dry tribochemical mechanical polishing SiC with an innovation abrasive-catalytic abrasive cluster

Research of dry tribochemical mechanical polishing SiC with an innovation abrasive-catalytic abrasive cluster

Effect of counter-surface chemical activity on mechanochemical removal of GaAs surface

A New Chemical-Mechanical Polishing Method Based On Colloids Silica and MgO Was Developed For Polishing Y3Al5O12 Material

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