Recent advances in synthesis and application of perovskite quantum dot based composites for photonics, electronics and sensors

Wang, Yaxin; Ding, Guanglong; Mao, Jing‐Yu; Zhou, Ye; Han, Su‐Ting

doi:10.1080/14686996.2020.1752115

Cited by 38 publications

(19 citation statements)

References 189 publications

(296 reference statements)

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“…There have been extensive research efforts in integrating photonic structures with low‐temperature processed semiconductors, such as organic semiconductors, [ 1 ] colloidal quantum dots (QDs), [ 2 , 3 , 4 ] organohalide perovskites, [ 5 , 6 , 7 ] and 2D materials, [ 8 ] aiming at achieving high‐performance optoelectronic or optical devices with tunable functions and low fabrication cost. Among the semiconductors, colloidal QD is a particularly promising material family for interaction with photonic structures due to its high photoluminescence (PL) quantum yield, [ 9 ] widely tunable bandgap from ultraviolet (UV) to far‐wave infrared (IR), [ 10 ] great photostability, [ 3 ] and large surface‐to‐volume ratio that allows for various interface modification and functionalization.…”

Section: Introductionmentioning

confidence: 99%

Integration of Colloidal Quantum Dots with Photonic Structures for Optoelectronic and Optical Devices

Chen

et al. 2021

Advanced Science

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Colloidal quantum dot (QD), a solution-processable nanoscale optoelectronic building block with well-controlled light absorption and emission properties, has emerged as a promising material system capable of interacting with various photonic structures. Integrated QD/photonic structures have been successfully realized in many optical and optoelectronic devices, enabling enhanced performance and/or new functionalities. In this review, the recent advances in this research area are summarized. In particular, the use of four typical photonic structures, namely, diffraction gratings, resonance cavities, plasmonic structures, and photonic crystals, in modulating the light absorption (e.g., for solar cells and photodetectors) or light emission (e.g., for color converters, lasers, and light emitting diodes) properties of QD-based devices is discussed. A brief overview of QD-based passive devices for on-chip photonic circuit integration is also presented to provide a holistic view on future opportunities for QD/photonic structure-integrated optoelectronic systems.

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Section: Introductionmentioning

confidence: 99%

Integration of Colloidal Quantum Dots with Photonic Structures for Optoelectronic and Optical Devices

Chen

et al. 2021

Advanced Science

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“…(Continued) Various applications of quantum dots (QDs) in different fields.• Graphene QDs (GQDs)• Anodes, cathodes, and electrolytes in Li-ion batteries• Improved cycling and storage capacities[159] • Can withstand thousands of charge/discharge cycles • Prolonging battery life Photonics[140] • Perovskite QDs • Lasers • Utilizes index coupling grating on GaAs material systems…”

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confidence: 99%

Nonlinear Optical Properties of CdSe and CdTe Core-Shell Quantum Dots and Their Applications

Kalsoom

et al. 2021

Front. Phys.

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The strong nonlinear optical behavior of low-dimensional materials, such as quantum dots and core-shell quantum dots, has been a topic of intense research in recent years. As quantum dots have tunable emission via changes in their sizes, they are potentially useful in photo-electronics, photovoltaic nonlinear optics, light-emitting diode fabrication, and laser protections. Variation among core and shell shape and size, along with the chemical composition of quantum dots, define their enhanced nonlinear optical properties. Some specific nonlinear optical properties, such as nonlinear refraction, optical limiting, saturable absorption, reverse saturable absorption of CdTe and CdSe quantum dots (QDs), as well as core-shell QDs and their applications, were assessed in this paper.

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“…Powerful and intense photoluminescence (PL), low non-radiative recombination rates, and long carrier lifetimes in pure and mixed perovskites have expanded their application in optoelectronic devices, such as light-emitting diodes (LEDs), lasers, and photodetectors [1][2][3][4][5][6][7][8][9]. Despite these features, controlling the morphology and thickness of perovskite films remain crucial to achieving high efficiency in a LED or in electricity production as defects and traps are essential to the movement of carriers in the material.…”

Section: Introductionmentioning

confidence: 99%

“…Although inorganic cations (e.g., CsPbX 3 ) show relatively improved stability compared with those of organic-inorganic hybrid counterparts (e.g., MAPbX 3 and FAPbX 3 ), CsPbX 3 PQDs in practical operation are still very sensitive to polar solvents and moisture, anion exchange reactions, and heating. All of these are due to the low formation energy of the crystal lattice and the high decentralization activity of surface ions [2][3][4][5][6][7]. CsPbX 3 nanocrystals (NCs) have received attention for their remarkable optoelectronic properties [8,9].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Light Amplification of CsPbBr3 Perovskite Quantum Dot Films via Surface Encapsulation by PMMA Polymer

et al. 2021

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Photonic devices based on perovskite materials are considered promising alternatives for a wide range of these devices in the future because of their broad bandgaps and ability to contribute to light amplification. The current study investigates the possibility of improving the light amplification characteristics of CsPbBr3 perovskite quantum dot (PQD) films using the surface encapsulation technique. To further amplify emission within a perovskite layer, CsPbBr3 PQD films were sandwiched between two transparent layers of poly(methyl methacrylate) (PMMA) to create a highly flexible PMMA/PQD/PMMA waveguide film configuration. The prepared perovskite film, primed with a polymer layer coating, shows a marked improvement in both emission efficiency and amplified spontaneous emission (ASE)/laser threshold compared with bare perovskite films on glass substrates. Additionally, significantly improved photoluminescence (PL) and long decay lifetime were observed. Consequently, under pulse pumping in a picosecond duration, ASE with a reduction in ASE threshold of ~1.2 and 1.4 times the optical pumping threshold was observed for PQDs of films whose upper face was encapsulated and embedded within a cavity comprising two PMMA reflectors, respectively. Moreover, the exposure stability under laser pumping was greatly improved after adding the polymer coating to the top face of the perovskite film. Finally, this process improved the emission and PL in addition to enhancements in exposure stability. These results were ascribed in part to the passivation of defects in the perovskite top surface, accounting for the higher PL intensity, the slower PL relaxation, and for about 14 % of the ASE threshold decrease.

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Recent advances in synthesis and application of perovskite quantum dot based composites for photonics, electronics and sensors

Abstract: View related articles View Crossmark data Citing articles: 1 View citing articles Recent advances in synthesis and application of perovskite quantum dot based composites for photonics, electronics and sensors

Cited by 38 publications

References 189 publications

Integration of Colloidal Quantum Dots with Photonic Structures for Optoelectronic and Optical Devices

Integration of Colloidal Quantum Dots with Photonic Structures for Optoelectronic and Optical Devices

Nonlinear Optical Properties of CdSe and CdTe Core-Shell Quantum Dots and Their Applications

Enhancement of Light Amplification of CsPbBr3 Perovskite Quantum Dot Films via Surface Encapsulation by PMMA Polymer

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