Recent advances in resists for 157 nm microlithography

Abstract

The synthesis and characterization of several new fluoropolymers designed for use in the formulation of photoresists for exposure at 157 nm will be described. The design of these platforms has in some cases been inspired by ab initio quantum mechanical calculations of excited state transition energies and by interpretation of gas phase VUV spectrophotometric data. We have explored anionic polymerizations, free radical polymerizations, metal-catalyzed addition polymerizations and metal-catalyzed copolymerizations with carbon monoxide in these studies. The polymers and resist formulations were characterized by VUV spectrometry and variable angle spectroscopic ellipsometry ͑VASE͒. Resist formulations based on these polymers were exposed at the 157 nm wavelength to produce high-resolution images that will be presented.

Flow cytometry detection of Shiga toxins in the blood from children with hemolytic uremic syndrome

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Nanolithography and Nanochemistry: Probe‐Related Patterning Techniques and Chemical Modification for Nanometer‐Sized Devices

“…[16][17][18] The most prominent application of lithography is that of UV-mask lithography, which is widely used in the semiconductor industry. [20][21][22][23][24][25][26] A publication by Grunze et al is of particular note because it introduces the possibility for chemical lithography using an electron beam. Therefore, industry and academia invest intensive effort in developing UV and deep-UV lithographic techniques, which can provide structural resolution down to 80 nm.…”

Colloidal Inorganic Nanocrystal Based Nanocomposites: Functional Materials for Micro and Nanofabrication

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