Recent Advances in Photodetectors Based on Two-Dimensional Material/Si Heterojunctions

Abstract

Two-dimensional (2D) materials have gained significant attention owing to their exceptional electronic and optoelectronic properties, including high carrier mobility, strong light–matter interaction, layer-dependent band structure and band gap. The passivated surface of 2D materials enables the fabrication of van der Waals (vdW) heterojunctions by integrating them with various other materials, such as nanowires, nanosheets and bulk materials. Heterojunction photodetectors, specifically those composed of 2D materials and silicon (Si), have attracted considerable interest due to the well-established processing techniques associated with Si and the excellent performance of the related devices. The hybrid dimension vdW heterojunction composed of 2D materials and Si has the advantages of excellent performance, low fabrication cost, and easy integration with silicon-based devices. It has unique advantages in the field of heterojunction photodetectors. This review provides an overview of the recent advancements in photodetectors based on 2D material/Si heterojunctions. First, we present the background and motivation of the review. Next, we discuss the key performance metrics for evaluating photodetector performance. Then, we review the recent progress made in the field of 2D material/Si heterojunction photodetectors. Finally, we summarize the findings and offer future prospects.

PtTe2/WS2/Pyramidal-Si van der Waals Heterojunction with Semiconformal Interfaces toward High-Performance Photodetectors

“…The linear dynamic range (LDR), denoted as α, is commonly employed to characterize the linear response range of photodetectors. It is defined as the power range within which the photodetector exhibits a linear behavior and is represented by eq . − α = 10 nobreak0em0.1em⁡ lg ( P sat P NEP ) …”

“…In region 2, electrons traverse the air gaps without recombination. The gain ( G ) depends on the lifetime and the drift time of the photogenerated carriers according to , G = τ normale t normale + τ normalh t normalh Here, τ e and τ h represent the lifetimes of photogenerated electrons and holes, respectively, while t e and t h denote the drift times of electrons and holes between the electrodes. It is assumed that the drift time of holes is greater than that of electrons and considered that the lifetime of photogenerated holes in n-Si is equal to their drift time due to the absence of supplementation from drain electrode contacting n-Si, while the lifetime of photogenerated electrons is equal to the drift time of holes.…”

“…In region 2, electrons traverse the air gaps without recombination. The gain (G) depends on the lifetime and the drift time of the photogenerated carriers according to 21,45…”

Further insights into the Na2WO4-assisted synthesis method for WS2

“…8–14 Among many 2D materials, transition metal dichalcogenides (TMDs) are the most intensively studied semiconductor materials because of their suitable bandgap, and intriguing electronic and optoelectronic properties, such as layer-number dependent bandgap and band structure, strong light–matter interaction, and large carrier mobility. 15–20 High-quality and large-area 2D materials are highly desirable for practical applications. To date, many efforts have been carried out for the controllable synthesis of wafer-scale 2D materials.…”

Dibenzofulvene Derivatives as Promising Materials for Photovoltaic and Organic Electronics

“…Thanks to this, electricity consumption in urban agglomerations can be significantly reduced. Solar cells using organic compounds are an extremely interesting solution that has been intensively researched recently [7,9,12,[15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. These include, among others, dye-sensitized solar cells (DSSCs) [16][17][18]25,26], perovskite solar cells (PVSs) [7,9,12,27,28], or even bulk heterojunction solar cells (BHJ) [15,19,20,29,30].…”