Recent Advances in In-Memory Computing: Exploring Memristor and Memtransistor Arrays with 2D Materials

Abstract

The conventional computing architecture faces substantial challenges, including high latency and energy consumption between memory and processing units. In response, in-memory computing has emerged as a promising alternative architecture, enabling computing operations within memory arrays to overcome these limitations. Memristive devices have gained significant attention as key components for in-memory computing due to their high-density arrays, rapid response times, and ability to emulate biological synapses. Among these devices, two-dimensional (2D) material-based memristor and memtransistor arrays have emerged as particularly promising candidates for next-generation in-memory computing, thanks to their exceptional performance driven by the unique properties of 2D materials, such as layered structures, mechanical flexibility, and the capability to form heterojunctions. This review delves into the state-of-the-art research on 2D material-based memristive arrays, encompassing critical aspects such as material selection, device performance metrics, array structures, and potential applications. Furthermore, it provides a comprehensive overview of the current challenges and limitations associated with these arrays, along with potential solutions. The primary objective of this review is to serve as a significant milestone in realizing next-generation in-memory computing utilizing 2D materials and bridge the gap from single-device characterization to array-level and system-level implementations of neuromorphic computing, leveraging the potential of 2D material-based memristive devices.

An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions

“…27,32−38 MoS 2 stands out as a promising material for future nanoelectronics due to its unique properties. 1 Unlike graphene, it possesses a tunable direct band gap ideal for optoelectronics. Additionally, MoS 2 exhibits high carrier mobility, a high on/off ratio of up to 10 8 , and the ability to switch resistance states, making it suitable for advanced transistors and logic devices.…”

“…x yj x y d d ( , ) interface (1) where j(x,y) is the magnitude of the position-dependent current density vector, assuming that it is perpendicular to the interface. When the electron wavelengths are comparable to local SBH variations λ ∼ a, we can evaluate the current density using the thermionic emission model, 53 where electrons need sufficient thermal energy to overcome the local ϕ B (x,y) barrier at the interface…”

“…We recognize the remarkable progress in the fabrication of high-quality, large-area MoS 2 films. However, achieving a complete absence of defects across these vast scales remains a significant hurdle. , These MoS 2 films still contain GBs, which can impact both the SBH and the overall performance of the device. Our model directly addresses this challenge by incorporating the effects of GBs.…”

“…A higher SBH translates to lower electrical conduction at the heterojunction, thus affecting the switching speed in transistors and memristors. By manipulating SBH, engineers can tailor devices for specific applications. − Accurate determination of SBH values is essential for optimizing the device functionality and design. However, the field of SBH characterization has long grappled with two significant challenges.…”

“…Here, we utilize MoS 2 –metal heterojunctions as an example to illustrate our approach to addressing these challenges, bearing in mind that our approach can be applied to any metal–semiconductor heterojunctions. An appealing reason for choosing MoS 2 is that it is a two-dimensional material promising for the next-generation nanoelectronics, such as artificial synapses, biosensors, memristors, and digital memory storage. ,− MoS 2 stands out as a promising material for future nanoelectronics due to its unique properties . Unlike graphene, it possesses a tunable direct band gap ideal for optoelectronics.…”