Recent Advances in GaN Power Switching Devices

Tamura, Shinichi; Anda, Yoshiharu; Ishida, M.; Uemoto, Yasuhiro; Ueda, T.; Tanaka, Tsuyoshi; Ueda, Daisuke

doi:10.1109/csics.2010.5619659

Cited by 30 publications

(19 citation statements)

References 5 publications

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“…In contrast, the GaN FET formed on an Si substrate is one of the most promising candidates to achieve high performance and low cost. Recently, intensive development competition of GaN FETs on an Si substrate has been carried out among companies aiming for power management devices [4], [5]. The GaN FETs for power management employ a low-resistivity (LR) Si substrate that is commonly used in Si devices.…”

Section: High-efficiency and High-power Microwave Amplifier Using Ganmentioning

confidence: 99%

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

Takenaka

Ishikura

Asano

et al. 2014

IEEE Trans. Microwave Theory Techn.

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We have successfully developed high-efficiency and high-power microwave amplifiers using a GaN field-effect transistor (FET) on a low-resistivity (LR) Si substrate for the first time. By introducing the LR Si substrate whose resistivity is less sensitive over temperature, the efficiency characteristics in high-temperature operation were significantly improved. In order to overcome the RF loss increase due to the utilization of the LR Si substrate, we have optimized the device structure of the FET by using an RC loss model accounting for drain-to-source capacitance and substrate resistance. High-efficiency characteristics were realized by optimizing the buffer structure and electrode structure. Furthermore, we have investigated efficiency improvement by second harmonic termination. The developed single-ended amplifier realized the saturation output power of 54 dBm, the linear gain (GL) of 19 dB, and the high efficiency of 33.5% at 8-dB back-off output power level under a WCDMA signal condition of 2.14 GHz at 50-V operation. The inverted Doherty amplifier using a pair of the 250-W GaN FETs delivered the of 57.3 dBm with the GL of 15.5 dB under a pulsed continuous wave signal condition of 2.14 GHz, and demonstrated the digital pre-distortion linearization characteristics with the high efficiency of 48% and the adjacent channel leakage power ratio of 55 dBc at 50 dBm. These results are comparable to the best performance among the ever reported GaN on SiC FET high-power amplifiers.Index Terms-GaN field-effect transistor (FET), high efficiency, high power, high temperature, inverted Doherty amplifier, microwave amplifiers, resistivity, second harmonic, Si substrate.

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Section: High-efficiency and High-power Microwave Amplifier Using Ganmentioning

confidence: 99%

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

Takenaka

Ishikura

Asano

et al. 2014

IEEE Trans. Microwave Theory Techn.

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“…Thus, the important parameter of this DPDT switch is isolation (when the control signal is off), insertion loss (IL) (when the control signal is on), port return loss (PRL) (reflection from the ports) and noise figure (NF). So, for proper functioning of the DPDT switch these parameters should be high [2,3]. Thus, functioning and designing of DPDT switch is critical and therefore the research is focused on accurate modeling of DPDT switch.…”

Section: Introductionmentioning

confidence: 99%

Artificial neural network modelling of ADS designed Double Pole Double Throw switch

Majumdar

Zuhair

Biswas

2014

18th International Symposium on VLSI Design and Test

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An alternative approach for designing a DPDT switch and characterizing it with the help of ANN modelling is presented in this work. ANN is one of the options which can be implemented to model the output parameters obtained from the designed switch. As, it does not require any detailed physical models, only a few training points are required to accurately model the standards. In this work, the DPDT switch circuit has been designed using ADS through UMS 0.15 µm p-HEMT process design kit. Neural network training has been done using Levenberg-Marqaurdt back propagation algorithm employed in the ANN toolbox of MATLAB software. The outcome of simulated results in an ADS designed switch indicates an isolation of -31 to -17 dB, an insertion loss of -1.15 to -0.8 dB, a noise figure of 0.4 to 0.38 and port return loss of -8.44 to -14.36 dB for a frequency level of 1 to 5 GHz. All the results obtained from ADS simulation have been validated using ANN modelling, and it shows a close agreement with a mean squared error of about 10 -8 .

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“…High-efficiency and high-frequency operation of inverter systems and Power Factor Correction (PFC) systems using junction-gated GaN devices [1] or cascode type packaged GaN HEMTs [2] have been demonstrated. The junction-gated devices have limited gatebias drive range (<6V) because of the turn-on of the p-n junction gate.…”

Section: Introductionmentioning

confidence: 99%

Enhancement-mode GaN-on-Si MOS-FET using Au-free Si process and its operation in PFC system with high-efficiency

Miyamoto

Okamoto

Kawaguchi

et al. 2015

2015 IEEE 27th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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We have developed an enhancement-mode GaNon-Si MOS-FET with a thin GaN channel (40nm) on a thick AlGaN back barrier layer (1um), using Au-free 150-mm Si process. The developed device showed a threshold voltage Vt of 1.1 V, an on-resistance Ron of 5.4 mΩcm2 and a breakdown voltage BV of 730 V. The developed E-mode GaN MOS-FETs demonstrated the potential for compact and efficient power electronics. A Power Factor Correction (PFC) circuit using the packaged GaN device (20A, 650V) operated with high efficiency of > 94 % at Pout=300 W, Vout=390 V and f SW =300 kHz.

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Recent Advances in GaN Power Switching Devices

Cited by 30 publications

References 5 publications

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

Artificial neural network modelling of ADS designed Double Pole Double Throw switch

Enhancement-mode GaN-on-Si MOS-FET using Au-free Si process and its operation in PFC system with high-efficiency

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