Recent Advances in Ferroelectric‐Enhanced Low‐Dimensional Optoelectronic Devices

Abstract

Figure 1. a-c) Schematic images of domain nucleation and growth during the switching process. a) Native domain distribution demonstrates dominant bundle domain in a large grain. b) Application of external electric field emerged small bundle domains at the grain boundaries (highlighted with yellow lines) while shrinking the original domain (within the blue polygon). c) Repeating excitation merged the growing small domains, completing the switching of the entire bundle domain (designated by a yellow line). Dark gray lines denote the grain boundaries. Reproduced with permission. [37]

Single Wavelength Operating Neuromorphic Device Based on a Graphene–Ferroelectric Transistor

“…A clean graphene layer was obtained after chemical vapor deposition (CVD) as confirmed by the Raman spectrum (Figure b) as well as by the anticlockwise behavior opposite to FE/graphene structures with an additional interfacial dipole layer. − The clear resistive hysteresis of graphene that mimics the FE polarization loop indicates that graphene is intrinsically strongly doped (Figure d). Increasing the gate voltage in the positive direction increases the resistance between source and drain electrodes, therefore shifting the Fermi level toward the graphene Dirac point indicating the hole-dominated charge transport in graphene as illustrated by the inset to Figure d.…”

Research progress on topological material-based photodetectors

“…It can also adjust the bandgap of 2D materials, increase the range of photodetecting, and effectively reduce the power consumption of photodetectors. 120,121 In short, TMs possess numerous unique properties for applying novel photodetecting techniques. More advances and opportunities are expected in this emerging field.…”

“…It can also adjust the bandgap of 2D materials, increase the range of photodetecting, and effectively reduce the power consumption of photodetectors. 120,121…”

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

“…To meet the need of the era of information, the photodetectors are moving toward the trend of fast response, wide band detection, high detectivity, high integration, and data storage capability. The advent of two-dimensional (2D) materials with exotic physical properties such as wide band response offers striking research opportunities to build highly integrated and efficient photodetectors. ,, Meanwhile, these years also have witnessed great achievements in the performance of the electronic devices based on ferroelectric materials. , The polarization of ferroelectrics was validated to be effective in the modulation and enhancement of the photodetection. ,, Besides, the device architecture also plays an essential role in photodetection. Similar to that of the mainstream semiconductor photodetectors, ferroelectricity modulated photodetectors can be in the form of various architectures including p-n diodes, Schottky diodes, and field-effect transistors.…”

“…The advent of two-dimensional (2D) materials with exotic physical properties such as wide band response offers striking research opportunities to build highly integrated and efficient photodetectors. 110,225,288 Meanwhile, these years also have witnessed great achievements in the performance of the electronic devices based on ferroelectric materials. 67,229 The polarization of ferroelectrics was validated to be effective in the modulation and enhancement of the photodetection.…”