Recent Advances in Chemical Mechanical Polishing Technologies of Silicon Carbide
Qunfeng Zeng,
Shichuan Sun
Abstract:Silicon Carbide (SiC) as the third generation semiconductor material has a very high surface quality requirement, which is the core index in the engineering application. Chemical Mechanical Polishing (CMP) is the only technology that can realize global flattening and non-damage surfaces at present. In this paper the recent advances in traditional CMP, the effects of slurry, and hybrid CMP of SiC were reviewed. The principles and recent developments of CMP were introduced. Then the influence of various factors … Show more
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