Recent Advances in Avalanche Photodiodes

Campbell, Joe C.; Demiguel, S.; Ma, Feng; Beck, A.L.; Guo, Xinjian; Wang, Shuling; Zheng, Xiaoguang; Li, Xiaowei; Beck, Jeff; Kinch, M. A.; Huntington, Andrew S.; Coldren, L.A.; Décobert, J.; Tscherptner, N.

doi:10.1109/jstqe.2004.833971

Cited by 165 publications

(68 citation statements)

References 51 publications

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“…Impact ionisation process is initiated at high reverse bias in these materials. Evacuation rate of charge carriers from the depletion region is also slow [8][9][10][11][12] . High excess noise factor (F) is reported in Si and III-V based materials due to the involvement of both type of carriers (electrons and holes) in the multiplication process.…”

Section: Iii-v Materials Based Irapdsmentioning

confidence: 99%

“…High excess noise factor (F) is reported in Si and III-V based materials due to the involvement of both type of carriers (electrons and holes) in the multiplication process. Band width is achieved in the range of 300 GHz -400 GHz in III-V APDs [10][11] . Several groups are involved in the development of the advanced APD detector for detection of ultraviolet (UV) light signals [14][15][16][17][18][19] .…”

Section: Iii-v Materials Based Irapdsmentioning

confidence: 99%

“…These are widely used in high speed and space applications. HgCdTe APD is an attractive choice for many IR applications such as LIDAR/ LADAR, defence, night vision, optical communications & atmospheric studies [9][10][11][45][46] . HgCdTe based SWIR APDs can be used as sensor in the LADAR system or 3-D imaging applications 40,[47][48][49][50][51][52][53][54][55][56][57][58][59][60] .…”

Section: Applicationsmentioning

confidence: 99%

“…High gain with low noise and wide bandwidth are vital for imaging applications. Avalanche photodiodes perform the functions of detection and amplification for the attenuated optical signals in the battle field and long range applications, especially in space based thermal imaging applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14] . APD provides high internal gain and fast response time, which are needed to meet the system requirements.…”

Section: Introductionmentioning

confidence: 99%

“…The high dark current and long dead times limit to the Geiger mode APD based LADAR seekers for detection of the incoming signals. The Linear APD has been more beneficial: (i) To find the range information from more than one target in a pixel's instantaneous field of view (FOV) (ii) To detect the target behind debris with low false alarm rate (iii) Can employ thresholding technique to reject dark current when they receive reflected signals, and (iv) Enable to record the signal intensity that is beneficial to increase in the efficiency [8][9][10] . In this paper, the significant results of HgCdTe and III-V based APD detector achieved by the leading group are included.…”

Section: Introductionmentioning

confidence: 99%

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Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

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This study presents on the design, fabrication and characteristics of HgCdTe mid-wave infrared avalanche photodiode (MWIR APD). The gain of 800 at -8 V bias is measured in n + -ν-p + detector array with pitch size of 30 μm. The gain independent bandwidth of 6 MHz is achieved in the fabricated device. This paper also covers the status of HgCdTe and III-V material based IR-APD technology. These APDs having high internal gain and bandwidth are suitable for the detection of attenuated optical signals such as in the battle field conditions/long range imaging in defence and space applications. It provides a combined solution for both detection and amplification if the detector receives a very weak optical signal. HgCdTe based APDs provide high avalanche gain with low excess noise, high quantum efficiency, low dark current and fast response time.

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Section: Iii-v Materials Based Irapdsmentioning

confidence: 99%

Section: Iii-v Materials Based Irapdsmentioning

confidence: 99%

Section: Applicationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Infrared Avalanche Photodiode Detectors

Singh

Pal

2017

Def. Sc. Jl.

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Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

Adachi

Kobayashi

2023

Physica Status Solidi (a)

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Herein, the formation of square‐shaped micropatterns of a Ga2O3/Se heterojunction avalanche photodiode (APD) at an active area of 10 μm × 10 μm and its application to a visible light sensor with high sensitivity by amplification of photocurrent density for the first time are reported. The miniaturization of the Ga2O3/Se APD improves its signal‐to‐noise ratio (SNR) by 10 dB as compared to the expected SNR. This is possible because of the improvement in thermal radiation and reduction in resistance loss. The effects of scaling on the photovoltaic conversion characteristics of Ga2O3/Se and TiO2/Se are investigated by varying the active area from 100 μm × 100 μm to 10 μm × 10 μm using photolithography and etching. A remarkable increase in the external quantum efficiency is observed for miniaturized Ga2O3/Se heterojunction APD at widths smaller than 50 μm × 50 μm by a combination of avalanche amplification and the micro‐scaling effect at a bias voltage of 15 V.

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(Al,In,Ga)N‐based photodetectors. Some materials issues

Muñoz

2007

Physica Status Solidi (b)

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www.pss-b.com filters are needed to stop low energy photons (VIS and infrared light), degradation is produced by UV photons (shorter device lifetime), efficiency lowers, dark current increases markedly with temperature, etc. The development of higher band gap III-arsenides or III-phosphides for UV photodetection did not progress substantially. On the other hand, for high sensitivity UV applications, PMT are needed, being bulky and requering a high-voltage power supply [1][2][3].To avoid the use of filters, to increase efficiency, to lower noise and dark current specially above room temperature, and to achieve visible-blind operation, UV detectors based on wide band gap semiconductors have been studied during the last decade. Thin film synthetic diamond detectors (E g = 5.4 eV, 227 nm, direct gap), were developed and commercialised mainly as polycrystalline photoconductor devices. SiC p-n junction PD (4H-SiC, E g = 3.26 eV; 6H-SiC, E g = 3 eV, indirect gap), have been also available. However, the turning point to make visible-blind UV detectors an appealing reality, to open really new possibilities for UV detection, has been the development of (Al,In,Ga)N semiconductors. The possibility of selecting the cut-off wavelength by adjusting the mole fraction of the ternary or quaternary alloys is unique, so far not being proven by any other wide-band-gap semiconductor family [2].III-nitrides are direct band gap materials, with GaN showing its absorption edge at 360 nm (E g = 3.44 eV) and at 200 nm for AlN (E g = 6.2 eV), and with the ability to form heterojunctions and to withstand high temperatures. Even the 400 nm UV frontier can be reached using (In,Ga)N alloys (band gap assigned today to InN is 0.7 eV). This tunability of the detection edge by just varying the Al(In) mole fraction, and the fact that (Al,In,Ga)N technology is already fully commercial for light emitting diodes, laser diodes (LEDs and LDs, respectively) [4], and it has just started for high electron mobility transistors (HEMTs), are very important points that have made (Al,In,Ga)N alloys the most adequate solution for UV detection in many applications. Besides, the high chemical and thermal stability of GaN, GaN-based detectors are also of interest for high photon energy detection (e.g. VUV and X-rays) and even for high energy particle detection [5].The photoconductive properties of GaN were studied by Pankove and Berkeyheiser in 1974 [6], and in about fifteen years of III-nitrides technology, the first GaN UV photoconductive detectors were reported by Khan in 1992 [7]. Since then, practically all types of PD structures have been developed, directly linked to advances in GaN and AlGaN epitaxial growth, and to progresses in p-type doping and in ohmic and Schottky contact technology. Trying to give a perspective of the developments, we may consider an initial exploratory phase (a proof of concept, first generation of UV detectors, VIS blind), just trying to confirm that GaN and AlGaN PDs (with low-medium Al mole fractions) were feasible. Later, a second ...

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Recent Advances in Avalanche Photodiodes

Cited by 165 publications

References 51 publications

Infrared Avalanche Photodiode Detectors

Infrared Avalanche Photodiode Detectors

Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

(Al,In,Ga)N‐based photodetectors. Some materials issues

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Recent Advances in Avalanche Photodiodes

Cited by 165 publications

References 51 publications

Infrared Avalanche Photodiode Detectors

Infrared Avalanche Photodiode Detectors

Formation of Micro‐Patterned Ga2O3/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode

(Al,In,Ga)N‐based photodetectors. Some materials issues

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Formation of Micro‐Patterned Ga₂O₃/Se Heterojunction and its Application to Highly Sensitive Avalanche Photodiode