Recent Advances in AlInsAs Avalanche Photodiodes

Yagyu, Eiji; Ishimura, E.; Nakaji, M.; Itamoto, Hiromitsu; Aoyagi, Takaaki; Yoshiara, Kiichi; Tokuda, Yasunori

doi:10.1109/ofc.2007.4348674

Cited by 5 publications

(2 citation statements)

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“…The peak bandwidth of 9.8 GHz was observed until gain increases to 4, and then the bandwidth gradually degrades. The gain-bandwidth product (GBP) of 135 GHz, which is reasonable considering 200-nm InAlAs avalanche layer [23][24][25][26], explains the behavior of bandwidth against gain for the entire gain region. The bandwidth of 7 GHz, which is sufficient for 10-Gbit/s NRZ operation, was maintained at a gain of 10, in accordance with a responsivity exceeding 9 A/W.…”

Section: Apd Characteristicsmentioning

confidence: 78%

Practically implementable high-sensitivity 10-Gbit/s avalanche photodiode using inverted p-down design

Nada

Chen

Katsurai

et al. 2021

IEICE Electron. Express

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We developed a practical high-sensitivity 10-Gbit/s III-V compound-based avalanche photodiode (APD), and an receiver optical subassembly (ROSA) mounting the APD for 10-Gbit/s burst-mode operation. The 10-Gbit/s APD features an inverted p-down structure with a 200-nm InAlAs avalanche layer that produces low excess noise and a low dark current simultaneously at large gain. By combining our APD with a burst-mode trans-impedance amplifier (B-TIA), the resulting APD-ROSA exhibited -32.7 dBm for 10-Gbit/s burst-mode optical signals, which allows for a loss budget exceeding 35 dB on optical access networks such as passive-optical networks.

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Section: Apd Characteristicsmentioning

confidence: 78%

Practically implementable high-sensitivity 10-Gbit/s avalanche photodiode using inverted p-down design

Nada

Chen

Katsurai

et al. 2021

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…They are particularly attractive for optical telecommunications as they can improve signal to noise ratio by more than IOdB compared to PIN photodiodes. Recently, Separated Absorption, Grading, and Multiplication (SAGM) APD structures with AlInAs avalanche material have demonstrated very good performances [1][2]. Thanks to AlInAs high ionization coefficients ratio k=a/~-4 (with a and~the ionization coefficients for electrons and holes respectively), high gainxbandwidth products and low excess noise factors are reached and due to electrons injection, structures get simpler inducing better stability and reliability [2].…”

mentioning

confidence: 99%