Recent Advances in 2D Materials for Photodetectors

Jiang, Jian; Wen, Yao; Wang, Hao; Yin, Lei; Cheng, Ruiqing; Liu, Chuansheng; Feng, Li; He, Jun

doi:10.1002/aelm.202001125

Cited by 117 publications

(93 citation statements)

References 145 publications

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“…However, the quasi‐continuous states along z ‐direction will become discrete due to the reduction of dimensions from 3D to 2D and therefore the presence of quantum confinement effect along z ‐direction. [ 133 ] The light absorption efficiency of 2D materials is high owing to strong light–matter interaction. As a result of quantum confinement along z ‐direction and localization of electronic bands, sharp peaks in the density of states near the valence and conduction band edges, increase the probability of free electron–hole pair excitation when the light corresponds to the bandgap is incident on the 2D materials.…”

Section: Crystal Structure and Physical Prosperities Of 2d Uwbg Semic...mentioning

confidence: 99%

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

et al. 2022

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Over the past decades, UWBG semiconductors employed in (opto)electronics are dominated by the traditional bulk materials, which have been extensively investigated and widely commercialized, such as Ga 2 O 3 , [1][2][3][4] diamond, [5][6][7] Mg x Zn 1-x O, [8] indium tin oxide (ITO), [9] indium gallium zinc oxide (IGZO), [10] III-nitride (GaN, AlN, Al x Ga 1-x N). [11] Furthermore, various methods have been used to improve devices performance via extensive research efforts, such as localized surface plasmon, [12,13] bandgap engineering, [14,15] array, [16][17][18] heterojunction. [19][20][21][22][23] However, in the post-Moore era, the traditional UWBG semiconductor devices with large size, high power and high cost cannot meet the future requirements of high-performance (opto)electronic devices. [24,25] In this regard, desingings of low-dimensional semiconductor material systems with novel structure and good adaptability have become a research hotspot.Successful exfoliation of graphene [38] in 2004 has tremendously boosted research on various 2D materials, including transition metal dichalcogenides (TMDs), [39][40][41][42][43][44][45] black phosphorous (b-P), [46][47][48] black arsenic (b-As), [49,50] phosphorous compounds, [51,52] hexagonal boron nitride (h-BN), [53][54][55][56] and Mxene. [57] Compared to devices based on narrow bandgap semiconductors, ultraviolet photodetectors based on 2D UWBG semiconductors need not costly high-pass optical filters to block out visible and infrared photons and without cooled to reduce dark current, leading to a significant loss of effective area of the system. Hence, the emergence of devices based on 2D ultrawide bandgap semiconductors has opened up an avenue to circumvent the dilemma mentioned above.The group metal chalcogenides (GaS, GaSe) are known for wide-range bandgap and are among the first to be investigated. [58,59] Then, the study quickly expand to other chalcogenide and has further inspired attention on other compounds, such as metal oxyhalides, metal nitrides, metal oxides, and Dion-Jacobson perovskite oxides. [28,[33][34][35][60][61][62][63][64][65][66][67][68][69][70][71][72][73][74] Atomically thin 2D UWBG semiconductor materials have sky-rocketing developed into a unique subdiscipline in the last decade, offering new possibilities for designing and fabricating (opto)electronic devices with novel functionalities at the nanoscale (Figure 1). Up to date, studies on 2D 2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investiga...

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Section: Crystal Structure and Physical Prosperities Of 2d Uwbg Semic...mentioning

confidence: 99%

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

et al. 2022

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“…Besides one-dimensional NWs, quasi two-dimensional (quasi-2D) InSb nanostructures, often called nanoflags (NFs), also attract great attention owing to their inherent design flexibility [ 4 , 9 , 15 , 18 ]. InSb NF-based devices have been proven appropriate for studies of novel quantum phenomena, development of scalable topological superconducting devices based on strong spin−orbit coupling [ 19 , 20 , 21 ], and infrared (IR) photodetectors exhibiting a broad spectral detection range [ 22 ]. These devices require high crystal quality and dimensional precision.…”

Section: Introductionmentioning

confidence: 99%

Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy

et al. 2022

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InSb nanoflags are grown by chemical beam epitaxy in regular arrays on top of Au-catalyzed InP nanowires synthesized on patterned SiO2/InP(111)B substrates. Two-dimensional geometry of the nanoflags is achieved by stopping the substrate rotation in the step of the InSb growth. Evolution of the nanoflag length, thickness and width with the growth time is studied for different pitches (distances in one of the two directions of the substrate plane). A model is presented which explains the observed non-linear time dependence of the nanoflag length, saturation of their thickness and gradual increase in the width by the shadowing effect for re-emitted Sb flux. These results might be useful for morphological control of InSb and other III-V nanoflags grown in regular arrays.

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confidence: 99%

Epitaxial Growth of 2D Ternary Copper–Indium–Selenide Nanoflakes for High‐Performance Near‐Infrared Photodetectors

Gan

Hao

Liu

et al. 2022

Advanced Optical Materials

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and chemical properties, including dangling-bond-free surface, atomic thickness, flexibility, high mobility, and tunable band gap. [1][2][3][4] These merits lead 2D materials to be expected to replace traditional photodetectors with the drawbacks of fragile quality, limited pixel size, and low-temperature operation in infrared region. [5][6][7] 2D layered materials have demonstrated attractive photoelectric properties, such as broadband detection, high photoresponsivity, high external quantum efficiency (EQE), high specific detectivity, and fast photoresponse, and thus could be promising candidates for future photodetectors in flexible electronics, biological imaging, and environmental monitoring. [8][9][10][11] However, the efficiency of photon trapping in 2D materials is relatively low. [12] Lots of efforts have been taken to improve the efficiency of photon trapping, such as constructing heterostructures with n-dimensional (n = 0, 1, 2) materials. [1] On the other hand, searching for new members of more photon-sensitive 2D materials is another effective way to improve the photodetector characteristics. [13][14][15] Initially, research was focused on single or binary elemental 2D materials, such as black phosphorus and transition metal dichalcogenides. Subsequently, ternary 2D materials have attracted increasing attention because of the flexibility to tune their composition and the emerging intriguing physical properties. [15][16][17] Devices based on ternary layered materials have exhibited outstanding photoelectric characteristics, which indicates that ternary 2D materials have promising applications in future photoelectric devices. [14,15] The copper-indium-selenium (CIS) system is composed of a series of typical ternary materials. The structure and physical properties of CIS can be tuned by changing the ratio of Cu/ In, and CIS materials are widely used as a light absorption layer in solar-energy applications. [18][19][20][21] Normally, CIS structures are n-type semiconductors with a direct band gap, except for CuInSe 2 which is a p-type semiconductor, and their Hall mobilities can reach 2.3 × 10 3 cm 2 V −1 s −1 . [22][23][24][25] CIS compounds usually have a chalcopyrite structure with different ordered vacancies. When the Cu/In ratio is between 1:5 and 1:9, the CIS system can contain layered structures. [17] Layered CIS nanoflakes such as CuIn 7 Se 11 can be exfoliated from the bulk single crystals, and they have been constructed into 2D semiconductors are promising for future photodetectors because of their dangling-bond-free surface, atomic thickness, tunable bandgap, high mobility, and flexible nature. However, the low light absorption is one of the main limits for the practical applications of 2D materials. Lots of efforts have been taken to optimize the light absorption, for example, constructing heterojunctions and exploring more photo-sensitive 2D materials. Here, the epitaxial growth of layered copper-indium-selenide (CIS) nanoflakes is realized by chemical vapor deposition. The CIS nanoflakes ar...

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Recent Advances in 2D Materials for Photodetectors

Cited by 117 publications

References 145 publications

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

Understanding the Morphological Evolution of InSb Nanoflags Synthesized in Regular Arrays by Chemical Beam Epitaxy

Epitaxial Growth of 2D Ternary Copper–Indium–Selenide Nanoflakes for High‐Performance Near‐Infrared Photodetectors

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