Recent Advances in 2D Layered Phosphorous Compounds

Abstract

2D layered phosphorous compounds (2D LPCs) have led to explosion of research interest in recent years. With the diversity of valence states of phosphorus, 2D LPCs exist in various material types and possess many novel physical and chemical properties. These properties, including widely adjustable range of bandgap, diverse electronic properties covering metal, semimetal, semiconductor and insulator, together with inherent magnetism and ferroelectricity at atomic level, render 2D LPCs greatly promising in the applications of electronics, spintronics, broad‐spectrum optoelectronics, high‐performance catalysts, and energy storage, etc. In this review, the recently research progress of 2D LPCs are presented in detail. First, the 2D LPCs are classified according to their elemental composition and the corresponding crystal structures are introduced, followed by their preparation methods. Then, the novel properties are summarized and the potential applications are discussed in detail. Finally, the conclusion and perspective of the promising 2D LPCs are discussed on the foundation of the latest research progress.

Charge Traps in All‐Inorganic CsPbBr3 Perovskite Nanowire Field‐Effect Phototransistors

“…[ 10–12,25–28 ] Although there is still much debate on the microscopic cause of hysteresis, screening of the gate potential due to mobile ions has been widely regarded as the dominant mechanism at room temperature. [ 11,12,25,28,33 ] However, also traps at the dielectric interface can give rise to substantial hysteresis. [ 34 ] Ferroelectricity, on the other hand, showed only minor influence on electrical transport.…”

“…[ 34 ] Ferroelectricity, on the other hand, showed only minor influence on electrical transport. [ 11,33,35 ] At low temperatures, ion migration is expected to be suppressed due to high activation energies [ 11,12,25,28,33,36–38 ] and interface traps are widely believed to become the dominant mechanism leading to hysteresis. [ 11,12,25,33 ] As temperature‐dependent measurement can help to shed more light onto the causes of hysteresis, we will revisit this discussion later.…”

“…[ 11,33,35 ] At low temperatures, ion migration is expected to be suppressed due to high activation energies [ 11,12,25,28,33,36–38 ] and interface traps are widely believed to become the dominant mechanism leading to hysteresis. [ 11,12,25,33 ] As temperature‐dependent measurement can help to shed more light onto the causes of hysteresis, we will revisit this discussion later. Based on the output and transfer curves, we have estimated the FET mobility in the saturation regime to be = 4 ×10 −3 cm 2 V −1 s −1 at room temperature for our best device (see Supporting Information and Figure S3, Supporting Information, for more details).…”

“…First, as mentioned earlier, mobile ions can effectively screen the gate potential and, thus, lead to hysteresis. [ 11,12,25,28,33 ] When decreasing the temperature, ion migration is expected to freeze out and the hysteresis is suppressed. [ 11,28 ] In our devices, almost no hysteresis is visible in the transfer curves at 210 K (see Figure 2a).…”

Emerging Perovskite Solar Cell Technology: Remedial Actions for the Foremost Challenges

“…in the crystal. [ 225,226 ] This significantly occurs in perovskite materials under applied electric field, though light exposure, heat, moisture, oxygen, and more, could be probable reasons for ion migration, which consequently manifests as instability, poor performance, and degradation of devices. [ 227–230 ] The device degradation mostly takes place at the interfaces of PSCs due to the chemical alterations between charge carrier selective contacts and the perovskites, demonstrated by Miyano et al.…”