Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies

Mondal, Ramit Kumar; Adhikari, Sonachand; Chatterjee, Vijay; Pal, Saurabh

doi:10.1016/j.materresbull.2021.111258

Cited by 68 publications

(48 citation statements)

References 268 publications

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“…According to a recent study on the optical features of band gap for theβ -Ga 2 O 3 crystal form, the valence band minimum is known for comparable flatness and a significant dispersion relation CBM. [52]. The computed optical bandgap is roughly 4.26 eV, according to Heyd-Scuseria-Ernzerh of relevant theory.…”

Section: VIImentioning

confidence: 69%

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Preparation Properties and Device Application of ?- Ga2O3: A Review

Kumar¹,

Singh²,

Shukla³

2022

IJRASET

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Extremely wide-bandgap β-Ga2O3 is a new way semiconducting has wide range of application such as electronics devices operated at high temperature and short-wavelength optoelectronics. It has a wide bandgap of 4.5eV -4.9 electron volt (ev) and great thermal stabilization up to 14000C, opening new possibilities for various device applications. The development of βGa2O3 thin film growth, characteristics, and device demonstrations is reviewed in this study. The methods used to demonstrate great-quality β-Ga2O3 thin film growth with controlled doping are discussed. Monoclinic β-Ga2O3 applications in devices are also discussed. Finally, a conclusion will be offered and future research perspectives on this key semiconducting material.

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Section: VIImentioning

confidence: 69%

“…The intrinsic conductivity of Ga 2 O 3 is n-type, which is ascribed to the recombination process [51]. Near the fascia's emission, which compensates for the deep levels [52]. Figure 6 shows the temperature-dependent cathodoluminescence of undoped Ga 2 O 3 in the blue , green , and ultraviolet (UV) bands.…”

Section: VIImentioning

confidence: 99%

Preparation Properties and Device Application of ?- Ga2O3: A Review

Kumar¹,

Singh²,

Shukla³

2022

IJRASET

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“…In the past two decades, researchers have made a great deal of efforts to improve the EQE and WPE of AlGaN‐based UV LEDs, which have made great progress. [ 5–7,11,17–19,30,33–91 ] Figures and show the EQE and WPE for UV LEDs of different emission wavelengths by various research groups (till dated 2021/8/30) respectively. As shown in Figure 2, we can see that the EQE gradually decreased while the emission wavelength reduced from 400 to 200 nm.…”

Section: Overview Of Algan‐based Uv Ledsmentioning

confidence: 99%

“…External quantum efficiency (EQE) of different peak wavelengths by various research groups. [ 5–7,11,17–19,30,33–91 ] The corresponding full name of mentioned abbreviations are listed as following: Chinese Academy of Sciences (CAS), Ferdinand‐Braun‐Institut, Berlin (FBH‐Berlin), Hebei University of Technology (HEBUT), Huazhong University of Science and Technology (HUST), Fraunhofer Institute for Applied Solid State Physics (IAF), National Chiao Tung University (NCTU), Nippon Telegraph and Telephone Corporation (NTT), National Institute of Information and Communications Technology (NICT), Ohio State University (OSU), Palo Alto Research Center (PARC), Sensor Electronic Technology, Inc (SETi), Technische Universität Berlin (TU Berlin), University of Wisconsin–Madison (UM‐Madison), University of South Carolina (USC), University of Science and Technology of China (USTC).…”

Section: Overview Of Algan‐based Uv Ledsmentioning

confidence: 99%

Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes

Liang

Sun

2022

Adv Materials Technologies

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AlGaN‐based deep ultraviolet light‐emitting diodes (UV LEDs) have gained rapidly growing attention due to their wide applications in water purification, air disinfection, and sensing as well as optical communication. Moreover, deep UV radiation has been verified as one of effective way to inactivate COVID‐19. However, although numerous efforts have been made in deep UV LED chips, the reported highest external quantum efficiency (EQE) of them is 20.3%, which is far lower than that of visible LEDs. The EQE of commercial packaged AlGaN‐based deep UV LEDs is usually lower than 5%, which will cause serious reliability problems as well. Therefore, it is very urgent to improve EQE and reliability of the devices from packaging level. In this review, a systematical summarization about the packaging technologies of AlGaN‐based deep UV LEDs has been analyzed and future prospects have been made as well. Firstly, this work provides a brief overview of the devices and analyzes why the packaging level reduces EQE and reliability in theory. Then, systematically reviews the recent advances in packaging technologies and deep UV micro‐LEDs. Finally, conclusions and outlooks are given as well. This review is of great significance for promoting the development of the packaging technologies for AlGaN‐based deep UV LEDs.

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“…In the past few decades, AlGaN-based ultraviolet light-emitting diode (UV-LED) has been attracting extensive attention due to its applications in water sterilization, surface disinfection, and biological detection, thanks to its compactness, long-term reliability, and being free of contamination [1][2][3][4][5][6]. With the outbreak of the coronavirus epidemic in 2019 (COVID-19) [7,8], more researchers joined the development of highly efficient UVC-LED, since it is promising for virus disinfection [7][8][9][10]. However, until now, UVC-LED still suffered low quantum efficiencies and weak optical output power.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of Light Extraction Efficiency of UVC-LED by SiO2 Antireflective Film

Wang¹,

et al. 2022

Crystals

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In order to achieve high quantum efficiency of AlGaN-based deep ultraviolet light-emitting diodes (UVC-LED), it is important to improve the light extraction efficiency (LEE). In this paper, theoretical simulation and experiment of SiO2 anti-reflective film deposited on UVC-LED were investigated. The effect of different SiO2 thickness on the light extraction efficiency of 275 nm UVC-LED was studied, showing that 140 nm SiO2 anti-reflective film can effectively improve the light output power of UVC-LED by more than 5.5%, which were also confirmed by the TFCALC simulation. The enhancement of UVC-LED light extraction efficiency by this antireflective film is mainly due to the 3λ2 light coherent effect at the SiO2/Al2O3 interface. Our work proved the promising application of antireflective coating on UVC-LED.

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Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies

Cited by 68 publications

References 268 publications

Preparation Properties and Device Application of ?- Ga2O3: A Review

Preparation Properties and Device Application of ?- Ga2O3: A Review

Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes

Enhancement of Light Extraction Efficiency of UVC-LED by SiO2 Antireflective Film

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