2013
DOI: 10.1063/1.4813270
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Realizing strain enhanced dielectric properties in BaTiO3 films by liquid phase assisted growth

Abstract: Articles you may be interested inStructural and dielectric properties of laser ablated BaTiO3 films deposited over electrophoretically dispersed CoFe2O4 grains Strong growth orientation dependence of strain relaxation in epitaxial (Ba,Sr)TiO3 films and the resulting dielectric properties

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Cited by 13 publications
(16 citation statements)
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“…However, the films deposited on rigid substrates exhibit suppressed permittivity (<1500) below and at T C . The sample on sapphire is characterized using surface interdigitated capacitors, probing the in‐plane dielectric properties and resulting in an increase to T C to ~175°C . In contrast, the sample on silicon has a finer grain size, often correlated with T C suppression, and is measured using the typical metal‐insulator‐metal geometry, which probes the out‐of‐plane permittivity.…”
Section: Electrical and Mechanical Boundary Conditionsmentioning
confidence: 99%
See 1 more Smart Citation
“…However, the films deposited on rigid substrates exhibit suppressed permittivity (<1500) below and at T C . The sample on sapphire is characterized using surface interdigitated capacitors, probing the in‐plane dielectric properties and resulting in an increase to T C to ~175°C . In contrast, the sample on silicon has a finer grain size, often correlated with T C suppression, and is measured using the typical metal‐insulator‐metal geometry, which probes the out‐of‐plane permittivity.…”
Section: Electrical and Mechanical Boundary Conditionsmentioning
confidence: 99%
“…The sample on sapphire is characterized using surface interdigitated capacitors, probing the inplane dielectric properties and resulting in an increase to T C to~175°C. 104 In contrast, the sample on silicon has a finer grain size, often correlated with T C suppression, and is measured using the typical metal-insulator-metal geometry, which probes the out-of-plane permittivity. Since the film is under tensile stress with a preferred polarization lying in the plane, the applied fields interact with the in-plane polarization only indirectly and is less sensitive to ferroelectric transitions.…”
Section: August 2016mentioning
confidence: 99%
“…[37] The BaTiO3 particles, fabricated by hydrothermal synthesis method, are found to be highly dense with the grain size controlled at 200 ~ 400 nm. [38] Kothandan synthesizes spherical BaTiO3 grains via the low temperature hydrothermal technique. The transmission electron microscope (TEM) image shows the diameter of spherical BaTiO3 nanoparticles is around 200 nm, illustrated in Figure 3.…”
Section: Hydrothermal Synthesismentioning
confidence: 99%
“…The most prominent and voluminous defects in planar thin film heterostructures are the two interfaces, which not only break the crystal symmetry, but also are accompanied by physical and chemical reconstructions, bound charges, space charges and strains, thereby can determine the characteristics of ferroelectric switching [ 294 ]. Depend on results of high-resolution TEM, local strain field is associated with each dislocation, which arises from the vicinity of a defect core and can be greater than the macroscopic misfit strain [ 295 ]. High defects density may result in overlapping strain fields in neighboring dislocations [ 295 ].…”
Section: Important Phenomena In Ferroelectric Thin Filmsmentioning
confidence: 99%