Realizing Single Chip White Light InGaN LED via Dual-Wavelength Multiple Quantum Wells

Abstract

Dual-wavelength multiple quantum wells (MQWs) have great potential in realizing high quality illumination, monolithic micro light-emitting diode (LED) displays and other related fields. Here, we demonstrate a single chip white light indium gallium nitride (InGaN) LED via the manipulation of the dual-wavelength MQWs. The MQWs contain four pairs of blue light-emitting MQWs and one pair of green light-emitting QW. The fabricated LED chips with nickel/gold (Ni/Au) as the current spreading layer emit white light with the injection current changing from 0.5 mA to 80 mA. The chromaticity coordinates of (0.3152, 0.329) closing to the white light location in the Commission International de I’Eclairage (CIE) 1931 chromaticity diagram are obtained under a 1 mA current injection with a color rendering index (CRI) Ra of 60 and correlated color temperature (CCT) of 6246 K. This strategy provides a promising route to realize high quality white light in a single chip, which will significantly simplify the production process of incumbent white light LEDs and promote the progress of high-quality illumination.

III-Nitride Materials: Properties, Growth, and Applications

“…Novel treatments of the quantum barrier have also rendered thrilling properties [32][33][34][35]. Single-chip white light has also been investigated [36]. In recent years, with their merits of high brightness, fast response, and high resolution, microLEDs have played an important role in next-generation displays such as augmented reality, full-color matrix automotive lamps, pico-projectors, etc.…”

Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile

“…Although the phase separation in AlGaN alloys can be used to generate dual-wavelength UV emission, the growth controllability, emission wavelength, and spectrum tunability are very poor, depriving them from practical applications. To achieve a precise modulation for each peak, it is necessary to grow MQWs with different target wavelengths, similar to the approach used in III-nitride based dual-wavelength visible LEDs. − However, unlike visible LEDs, the challenges in AlGaN-based UV-LEDs are compounded by the low hole concentration and poor hole mobility in AlGaN materials with high Al content. These limitations hinder the effective transport of holes to the target MQWs region and lead to difficulty in realizing a dual-wavelength UV-LED.…”

“…A Comparison between Reported Dual-Wavelength LEDs and Our Achievement Institute of Semiconductors, CAS34 blue + green, 450 + 550 nm blue + green + blue large color gamut Institute of Physics, CAS35 blue + green, 430 + 568 nm blue + green large color gamut HKUST36 blue + green, 458 + 538 nm blue + green large color gamut Fudan University37 blue + yellow, 456 + 568 nm blue + yellow large color gamut this work UVC + UVB, 278 + 307 nm UVB + UVC tunable spectral profile and stable emission distribution…”

The Effect of Lu3+ Doping on the Structural Stability and Luminescence Performances of Gd3Al5O12:Dy Phosphors

“…There are two ways to produce white LEDs. The first method is to employ the multi-chips that were composed of red, green and blue light sources, and the other one is using one phosphorescent conversion LED consisting of a blue InGaN chip to excite a yellow-emitting material [19,20]. Multi-chip LEDs usually have the disadvantages of complex structure, a low color rendering index and low stability.…”