Realizing low-ion-migration and highly sensitive X-ray detection by building g-C3N4 and CH3NH3PbI3 bulk heterojunction pellets

Xue, Chengzhi; Xiao, Yingrui; Liu, Xing; Xu, Ziwei; Li, Nan; Wang, Shubo; Yuan, Ningyi; Ding, Jianding; Guo, Xu; Yang, Zhou; Liu, Shengzhong (Frank)

doi:10.1039/d3ta05555h

Cited by 3 publications

(2 citation statements)

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“…The effect of THB modification on the ion migration of the perovskite was further evaluated. In general, the ionic conductivity (σ) measurement is considered to be an effective way to obtain ionic migration activation energy ( E a ) . Therefore, we prepared an ITO/perovskite/Au device and measured the σ changes of two films at different temperatures (Figure c,d).…”

Section: Resultsmentioning

confidence: 99%

Surface Crystallization Enhancement and Defect Passivation for Efficiency and Stability Enhancement of Inverted Wide-Bandgap Perovskite Solar Cells

Dong,

Men,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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Wide-bandgap (WBG) inverted perovskite solar cells (PSCs) are used as the top cell for tandem solar cells, which is an effective way to outperform the Shockley–Queisser limit. However, the low efficiency and poor phase stability still seriously restrict the application of WBG inverted PSCs. Here, the surface of the WBG perovskite film was passivated by the synthesized 1,2,4-tris(3-thienyl)benzene (THB). The THB size well matches with the halogen ion vacancy on the perovskite surface, and the S atom in THB can strongly interact with Pb2+ on the surface of the WBG perovskite film to the greatest extent, which effectively passivates surface defects and suppresses the recombination of carriers caused by these defects. At the same time, the S atom in THB occupied the migration site of the halogen ions, which inhibits the migration of halogen ions. Due to the strong conjugation effect and stability of THB, it can be locked on the surface of perovskite to increase the lattice strength and inhibit the segregation of photoinduced halide, thus improving the performance and operational stability of PSCs. The THB-modified WBG (E g = 1.71 eV) PSC achieves a maximum power conversion efficiency of 20.75%, and its 99.0% is retained after 1512 h at a relative humidity of 10–25%. Under the irradiation of 1000 lx LED light, the indoor power conversion efficiency of the THB-modified WBG PSC reaches 34.15%.

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Section: Resultsmentioning

confidence: 99%

Surface Crystallization Enhancement and Defect Passivation for Efficiency and Stability Enhancement of Inverted Wide-Bandgap Perovskite Solar Cells

Dong,

Men,

Wang

et al. 2024

ACS Appl. Mater. Interfaces

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“…6, among all materials, the n = 10 material exhibits the lowest dark current density, approximately 66 nA cm −2 . Dening the current dri value 32 as the difference in current density at the start and end points per unit time and per unit eld strength, the degree and magnitude of current dri for different materials are quantied. The dark current dri values for n = 6 and n = 10 materials are less than those of the unmodied material devices, especially the n = 10 material, which exhibits higher stability in terms of dark current, with relatively small dark current dri, only 0.016 pA cm −1 s −1 V −1 .…”

Section: Ion Migration Characterizationmentioning

confidence: 99%

Ion migration and dark current suppression in quasi-2D perovskite-based X-ray detectors

Yang,

Qin,

Qin

et al. 2024

RSC Adv.

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Flexible Single Microwire X‐Ray Detector with Ultrahigh Sensitivity for Portable Radiation Detection System

Chen,

Niu,

et al. 2024

Advanced Materials

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Sensitive, flexible, and low false alarm rate X‐ray detector is crucial for medical diagnosis, industrial inspection, and scientific research. However, most semiconductors for X‐ray detectors are susceptible to interference from ambient light, and their high thickness hinders their application in wearable electronics. Herein, a flexible visible‐blind and ultraviolet‐blind X‐ray detector based on Indium‐doped Gallium oxide (Ga2O3:In) single microwire is prepared. Joint experiment−theory characterizations reveal that the Ga2O3:In microwire possess a high crystal quality, large band gap, and satisfactory stability, and reliability. On this basis, an extraordinary sensitivity of 5.9 × 105 µC Gyair−1 cm−2 and a low detection limit of 67.4 nGyair s−1 are achieved based on the prepared Ag/Ga2O3:In/Ag device, which has outstanding operation stability and excellent high temperature stability. Taking advantage of the flexible properties of the single microwire, a portable X‐ray detection system is demonstrated that shows the potential to adapt to flexible and lightweight formats. The proposed X‐ray detection system enables real‐time monitor for X‐rays, which can be displayed on the user interface. More importantly, it has excellent resistance to natural light interference, showing a low false alarm rate. This work provides a feasible method for exploring high‐performance flexible integrated micro/nano X‐ray detection devices.

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Realizing low-ion-migration and highly sensitive X-ray detection by building g-C₃N₄ and CH₃NH₃PbI₃ bulk heterojunction pellets

Abstract: Three-electronic-dimensional (3D) lead halide perovskites show high X-ray sensitivities and low detection limits. However, the serve ion migration causes dark current drift and worse long-term operational stability. Although two-electronic-dimensional (2D)...

Cited by 3 publications

References 44 publications

Surface Crystallization Enhancement and Defect Passivation for Efficiency and Stability Enhancement of Inverted Wide-Bandgap Perovskite Solar Cells

Surface Crystallization Enhancement and Defect Passivation for Efficiency and Stability Enhancement of Inverted Wide-Bandgap Perovskite Solar Cells

Ion migration and dark current suppression in quasi-2D perovskite-based X-ray detectors

Flexible Single Microwire X‐Ray Detector with Ultrahigh Sensitivity for Portable Radiation Detection System

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