Realizing both n- and p-types of high thermoelectric performance in Fe_1−xNi_xTiSb half-Heusler compounds

Abstract

The random distribution of Fe/Ni atoms in Fe1−xNixTiSb, which leads to low lattice thermal conductivity and thus high quality factors.

Alloyed triple half-Heuslers: a route toward high-performance thermoelectrics with intrinsically low lattice thermal conductivity

“…3d. Notably, the lattice thermal conductivity of Ti(Fe 0.5 Co 0.25 Cu 0.25 )Sb is much smaller than those of well-known HH materials such as ZrCoSb ( κ L = 18 W m −1 K −1 ), 17 NbFeSb ( κ L = 17 W m −1 K −1 ), 3 ZrNiSn ( κ L = 8–10 W m −1 K −1 ), 18,19 NbCoSn ( κ L = 9–10 W m −1 K −1 ), 20 TiCoSb ( κ L = 14–16 W m −1 K −1 ) and DHH TiFe 0.5 Ni 0.5 Sb ( κ L = 9 W m −1 K −1 ) 13,21 at 300 K. This result endorses the effectiveness of alloyed THH on reducing the lattice thermal conductivity and demonstrates a simple strategy to discover HH alloys with intrinsically low lattice thermal conductivity through the valence balanced approach.…”

Development of Thermoelectric Half-Heusler Alloys over the Past 25 Years

“…(Ti,Zr,Hf,X)NiSn Nb [105] (Ti,Zr,Hf)(Ni,X)Sn Cu [170] (Ti,Zr,Hf,X)NiSn/Z V + Nb Sb [174] (Ti,Zr)Ni 1±x Sn [22,110,171] (Ti,Zr)Ni 1±x Sn [138] (Zr,Hf)Ni 1±x Sn [77] TiNiSn+full Heusler [83] TiNiSn+HfO 2 [149] ZrNiSn+B [29] * ZrNiSn+La [108] ZrNiSn+ZrO 2 [35] ZrNiSn+ZnO [153] (Zr,Hf)NiSn+W [197] (Zr,Hf)NiSn+ZrO 2 [95] ( (Zr,X)CoSb Nb [156] Zr(Co,X)Sb Ni [141] HfCoSb [45,46,56,177,195] (Hf,X)CoSb Nb [182] (Ti,Zr)CoSb [67] (Ti,Zr)(Co,X)Sb Ni [67] (Ti,Hf,X)CoSb Ta [204] (Zr,Hf,X)CoSb Nb [158,182] Nb + Ta [214] (Ti,Zr,Hf)CoSb [56,64] (Ti,Zr,Hf)(Co,X)Sb Ni [64] (V,Nb,Ta)FeSb-System VFeSb [74,91,192] (V,X)FeSb Ti [15] NbFeSb [26,148] Nb(Fe,X)Sb Ir [184] (V,Nb)FeSb [92] (V,Nb)(Fe,X)Sb Co [92] Ti(Fe,X)Sb Ni [200] Ti(Fe,X)Sb/Z Ni Sn [13]…”

“…P-type half-Heusler alloys. (Ti,Zr)(Co,Fe)Sb [218] (Ti,Zr)(Co,Fe)Sb/Z Sn [218] Ti(Fe,Ni)Sb [200] Ti(Co,Fe)Sb+InSb [94] Table 2. Cont.…”

Off‐Stoichiometry Quaternary Heusler‐Like Semiconductors with Magnetism and Disorder

“…These differ from the HH‐based quaternary compounds such as Fe a Ni 1‐ a TiSb with only one point of a = 0.5 to become semiconductors, around which a slight composition change in Fe a Ni 1‐ a TiSb leads to a transition between n‐ and p‐type. [ 18,19 ] Therefore, the compensated Heusler‐like compounds could realize the regulation of the electrical transport properties over a wide composition range.…”

“…The disordering effect of Fe/Ni atoms leads to low thermal conductivity and the wide‐range tunability of the composition results in achieving two types of carrier domination. [ 17–19 ] The p‐ and n‐type systems based on the same parent material have achieved peak ZT of ≈1 and ≈0.7 at 973 K, respectively, which are beneficial and promising for practical applications. [ 18 ] The stability of the Fe 0.5 Ni 0.5 TiSb as a narrow bandgap semiconductor can also be well understood by the VEC = 18 valence balance rule.…”