2017
DOI: 10.1039/c6ra28482e
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Realization of uniaxially strained, rolled-up monolayer CVD graphene on a Si platform via heteroepitaxial InGaAs/GaAs bilayers

Abstract: We fabricated III–V semiconductor/graphene tubular structures with micrometer scale diameter and realized graphene strain engineering through the change of diameter.

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Cited by 11 publications
(10 citation statements)
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“…Recently, several approaches have been proposed to build a platform for rolled‐up graphene with conventional semiconductors through the transfer process of graphene, where graphene acts as the inner layer of the rolled‐up structure . However, the interactions of the transferred graphene with additional materials strongly vary among different studies, which appear to be either tensile or strain‐free . In our case, the in‐plane strain state redistribution for the nontransfer rolled‐up graphene oxides structure with a high reproducibility is studied and illuminated.…”
Section: Resultsmentioning
confidence: 99%
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“…Recently, several approaches have been proposed to build a platform for rolled‐up graphene with conventional semiconductors through the transfer process of graphene, where graphene acts as the inner layer of the rolled‐up structure . However, the interactions of the transferred graphene with additional materials strongly vary among different studies, which appear to be either tensile or strain‐free . In our case, the in‐plane strain state redistribution for the nontransfer rolled‐up graphene oxides structure with a high reproducibility is studied and illuminated.…”
Section: Resultsmentioning
confidence: 99%
“…Figure b depicts the rolled‐up InGaAs/GaAs/graphene structure, which is proposed in ref. . For the tensile prestrain state in the graphene/Y 2 O 3 /ZrO 2 trilayer structure, we suppose the strain in the Y 2 O 3 layer is near 0 and the ZrO 2 layer is near 0.93%.…”
Section: Resultsmentioning
confidence: 99%
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