Realization of ultra-flat perovskite films with surprisingly large-grain distribution using high-pressure cooking

KBF4 Additive for Alleviating Microstrain, Improving Crystallinity, and Passivating Defects in Inverted Perovskite Solar Cells

“…The defect density ( N trap ) can be calculated from the trap‐filling limit voltage ( V TFL ) by: $$\[ \begin{array}{*{20}{c}}{{N_{{\rm{trap}}}} = \frac{{2{V_{{\rm{TFL}}}}\varepsilon {\varepsilon _0}}}{{q{L^2}}}}\end{array} \]$$where L is the thickness of the perovskite film, q is the elementary charge, ε and ε 0 are the dielectric constants of perovskite and vacuum, respectively. [ 29,30 ] The V TFL calculated from the I – V curves of SCLC decreases from 0.275 to 0.0908 V. Consequently, the trap density of the perovskite film is reduced from 3.54 × 10 15 to 1.17 × 10 15 cm –3 when 1.5% KBF 4 is added. This result matches well with the prolonged carrier lifetime measured by TRPL, indicating that the incorporation of KBF 4 could effectively reduce the defects in triple‐cation mixed perovskite.…”

Buried Interface Engineering Enables Efficient, Scalable, and Stable Inverted Perovskite Solar Cells

“…According to the Tauc plots analysis (Figure S7c, Supporting Information), the bandgap of the perovskite film deposited on the CTAC-DMF-treated PTAA is not changed. [43,44] To further investigate the carrier transfer kinetics and defect passivation between perovskite and PTAA with the CTAC treatment, steady-state photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy characterization were employed. As shown in Figure 3a, the perovskite film on the bare glass substrate exhibits the strongest PL intensity, suggesting a high-quality perovskite film.…”

“…According to the Tauc plots analysis (Figure S7c, Supporting Information), the bandgap of the perovskite film deposited on the CTAC‐DMF‐treated PTAA is not changed. [ 43,44 ]…”

Halide perovskites and high-pressure technologies: a fruitful encounter

“…12 Pressure-assisted annealing was also applied to CsPbBr 3 and FA 0.83 Cs 0.07 MA 0.13 PbI 2.64 Br 0.39 for the synthesis of compact and flat films. 79,80 Large and uniform perovskite films are crucial for industrial PV applications, but they are relatively hard to obtain. The spincoating process yields only a radial configuration of perovskite films, with large roughness, because of the precursor's unfavorable wettability and fast crystal growth kinetics.…”

“…12 Pressure-assisted annealing was also applied to CsPbBr 3 and FA 0.83 Cs 0.07 MA 0.13 PbI 2.64 Br 0.39 for the synthesis of compact and flat films. 79,80…”