Realization of tin oxide like anode for the manufacture of the organic solar cells

Abstract

Abstract.The transparent oxides such as SnO 2 , In 2 O 3 and ZnO continue to arouse a private interest for their various applications. The objective of the various studies being to carry out the layers which are simultaneously most transparent and most conducting possible. Thus in the field of the solar spectrum, the transmission of the layers must be higher than 80% and their conductivity exceeding 10 3 (Ohm.cm) -1 .Their transparency which is related to the value of their forbidden band must be higher than 3.7 e V. Their electric properties as for them depend on the composition of the layers and a possible doping. In this work, one characterized layers of SnO 2 deposited by chemical pulverization, one carried out measurements by, electronic scan microscopy, diffraction of x-rays and also of the optical measurements and electronic. It results from it that the layers are conducting and transparent in the visible one but they are relatively rough, following its characterizations, one carried out organic photovoltaic cells using these layers of SnO 2 and also of the commercial ITO like anode in these components. More particularly one was interested in the influence of the presence of a fine layer of gold between the anode and organic material.

Phosphate-Passivated SnO2 Electron Transport Layer for High-Performance Perovskite Solar Cells

“…10 Besides, tin oxide (SnO 2 ) is an n-type semiconductor with a band gap (E g ) of 3.6 eV that has been widely used in dye-sensitized solar cells (DSSCs) and organic photovoltaics (OPVs) for many years. 11,12 The advantages of high electron mobility and moderate fabrication processing lead SnO 2 to become a strong competitor to TiO 2 . 13 The SnO 2 ETL was first introduced into PSCs by Ke et al 14 and was followed by others quickly.…”

“…However, TiO 2 ETL has a crucial drawback that the electron mobility is too low, thus it needs troublesome remediation . Besides, tin oxide (SnO 2 ) is an n-type semiconductor with a band gap ( E g ) of 3.6 eV that has been widely used in dye-sensitized solar cells (DSSCs) and organic photovoltaics (OPVs) for many years. , The advantages of high electron mobility and moderate fabrication processing lead SnO 2 to become a strong competitor to TiO 2 . The SnO 2 ETL was first introduced into PSCs by Ke et al and was followed by others quickly. − However, the performance of SnO 2 ETL in their devices was not as high as expected, mainly because of a high interface trap state density and low conductivity.…”