Realization of single terminated surface of perovskite oxide single crystals and their band profile: (LaAlO3)0.3(Sr2AlTaO6)0.7, SrTiO3 and KTaO3 case study

Tomar, Ruchi; Wadehra, Neha; Budhiraja, Vaishali; Prakash, Balaji; Chakraverty, S.

doi:10.1016/j.apsusc.2017.08.101

Cited by 31 publications

(27 citation statements)

References 38 publications

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“…Such conducting interface if combined with strong SOC and relativistic conduction electrons, can be a prospective candidate for realizing Rashba effect. [ 21 ] Most of the oxide based conducting interfaces are realized in SrTiO 3 (STO) based systems (such as LaAlO 3 –STO, LaVO 3 –STO, LaTiO 3 –STO). [ 22 ] Until recently, conducting interfaces of LaTiO 3 –KTO, EuO–KTO, and LaVO 3 –KTO were reported.…”

Section: Figurementioning

confidence: 99%

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Kumar

Wadehra²,

Tomar³

et al. 2020

Adv Quantum Tech

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The momentum‐dependent splitting of spin‐bands in an electronic system is known as the “Rashba effect.” Systems with the Rashba effect possess a Dirac point in momentum space, which may act as a source of Berry's phase for the conduction electrons of such system. Herein, the Shubnikov–de Haas oscillations (SdH) at the conducting interface of EuO–KTaO3 (KTO) are reported. The observed SdH oscillations suggest the presence of two Fermi surfaces. For both Fermi surfaces, the presence of a Berry's phase is seen. Strong spin–orbit coupling is also observed in this system. The existence of two Fermi surfaces with Berry's phase along with the signature of strong spin–orbit coupling suggest the formation of Rashba spin‐split bands. As in topological insulators, two‐fold planar Hall effect and anisotropic magnetoresistance are also observed in EuO–KTO. Analyzing the SdH, Hall, and magnetoresistance data, the authors draw a possible band diagram near the Fermi surface.

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Section: Figurementioning

confidence: 99%

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Kumar

Wadehra²,

Tomar³

et al. 2020

Adv Quantum Tech

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“…For Ti-termination, method of high temperature annealing followed by DI water etching was employed. 26 The STO (001) single crystals were annealed at an optimized temperature of 650 o C for two hours in air under ambient conditions. To anneal the substrates, the ramp rate was kept 300 o C/hour while heating and it was kept 250 o C/hour while cooling down to room temperature.…”

Section: Discussionmentioning

confidence: 99%

Light-enhanced gating effect at the interface of oxide heterostructure

Wadehra¹,

Tomar²,

Yokoyama³

et al. 2020

Preprint

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“…To study the effect of cation stoichiometry of LVO on the interfacial conductivity, 50 ML of LVO films were grown on TiO 2 ‐terminated STO (001) substrate. Single termination (TiO 2 ) of the STO substrate was achieved by using standard method: high temperature annealing followed by deionized water etching . The samples were grown in PLD system using polycrystalline LaVO 4 as a target material.…”

Section: Methodsmentioning

confidence: 99%

Conducting LaVO₃/SrTiO₃ Interface: Is Cationic Stoichiometry Mandatory?

Tomar¹,

Varma

Kumar³

et al. 2019

Adv Materials Inter

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The origin of the conductivity at the interface of two insulating perovskite oxides is a matter of intensive studies. The conductivity generated at the interface of insulating LaVO3 (LVO) and SrTiO3 (STO) is explained in terms of polar catastrophe. Here, the authors grown LVO films on (001) TiO2‐terminated STO substrate employing pulsed laser deposition technique and demonstrate a transition from conducting to insulating interface by changing the La‐stoichiometry by only 1%, whereby such transition takes place for La‐deficient films. The effect of cation (non)stoichiometry of LVO film on both carrier density and mobility is studied and compared with previously reported LaAlO3–STO interface. This observation suggests a revisit to the explanation of possible origin of such conductivity beyond the polar catastrophe scenario and can be instrumental in search for novel conducting interfaces.

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Realization of single terminated surface of perovskite oxide single crystals and their band profile: (LaAlO3)0.3(Sr2AlTaO6)0.7, SrTiO3 and KTaO3 case study

Cited by 31 publications

References 38 publications

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Light-enhanced gating effect at the interface of oxide heterostructure

Conducting LaVO₃/SrTiO₃ Interface: Is Cationic Stoichiometry Mandatory?

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Realization of single terminated surface of perovskite oxide single crystals and their band profile: (LaAlO3)0.3(Sr2AlTaO6)0.7, SrTiO3 and KTaO3 case study

Cited by 31 publications

References 38 publications

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO3

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO3

Light-enhanced gating effect at the interface of oxide heterostructure

Conducting LaVO3/SrTiO3 Interface: Is Cationic Stoichiometry Mandatory?

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Product

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Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Conducting LaVO₃/SrTiO₃ Interface: Is Cationic Stoichiometry Mandatory?