Realization of pressure induced emission enhancement for rare earth luminescent materials: Adopting delta-doped structure

Zhang, Huafang; Hou, Sumin; Wang, Tao; Liu, Shijie; Yang, Xingjin; Li, Quanjun; Shen, Pengfei; Liu, BingBing; Gao, Huiping; Mao, Yanli

doi:10.1016/j.jallcom.2020.157882

Cited by 1 publication

(1 citation statement)

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“…Over the past several decades, due to the great demand for broad applications of trivalent rare earth (RE)-doped inorganic crystals, − research has focused on the effect of material structure on energy transfer (ET) and the resultant photoluminescence (PL) of RE ions, from theory to technology, such as Judd–Ofelt theory, Dexter theory, crystallinity, size, morphology, absorption, lattice relaxation, and radiative and nonradiative relaxation (NR) processes. − However, this enormous scope of research also means that there is a need for new perspectives in the in-depth study of RE-doped materials; otherwise, fundamental breakthroughs in material structure design and PL control cannot be achieved. In this work, we find for the first time the ET inhibition of RE ions via efficient vertical photocarrier separation, triggered by a highly anisotropic layered semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Locking Energy Transfer of Rare Earth Ions via an “Electron Jam” Caused by Vertical Photocarrier Separation of a Layered Semiconductor

Fan

et al. 2022

J. Phys. Chem. C

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Energy transfer (ET) of trivalent rare earth (RE)-doped inorganic crystals has been investigated comprehensively from theory to technology; however, the influence of photocarrier transmission has been considered impossible, as the 4f electrons of RE ions are shielded well from outer electrons. Here, on the basis of an anisotropic Bi3O4Cl layered semiconductor, we report for the first time the ET phenomenon of an Er3+–Yb3+ codoped system locked by photocarrier separation. When the photocarrier of the layered host is separated efficiently under a vertical spontaneous interelectric field, the ET and energy-back-transfer (EBT) between Er3+ and Yb3+ ions can be inhibited completely; otherwise, they can occur as usual. Consequently, the Yb3+ ion dopant mainly acts as a quencher for 980 nm-excited visible upconversion (UC) and infrared emission of Er3+ ions, and the cross-relaxation between Er3+ and Yb3+ ions via EBT is inhibited simultaneously. We show that the separated photoholes on the surface can suppress the recombination of excited electrons of Er3+ ions to the ground level, leading to a special “electron jam” on intermediate levels, which prevents the acceptance of excited electrons further via either the ET or EBT process. The result of our current work greatly enhances the understanding of ET behavior of RE ions and the material structure of RE-doped materials.

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Section: Introductionmentioning

confidence: 99%

Locking Energy Transfer of Rare Earth Ions via an “Electron Jam” Caused by Vertical Photocarrier Separation of a Layered Semiconductor

Fan

et al. 2022

J. Phys. Chem. C

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show abstract

Realization of pressure induced emission enhancement for rare earth luminescent materials: Adopting delta-doped structure

Cited by 1 publication

References 40 publications

Locking Energy Transfer of Rare Earth Ions via an “Electron Jam” Caused by Vertical Photocarrier Separation of a Layered Semiconductor

Locking Energy Transfer of Rare Earth Ions via an “Electron Jam” Caused by Vertical Photocarrier Separation of a Layered Semiconductor

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